An S-Band GaN on Si High Power Amplifier with 170W Output Power and 70% Drain Efficiency

2012 ◽  
Author(s):  
N. Kosaka ◽  
H. Uchida ◽  
H. Noto ◽  
K. Yamanaka ◽  
M. Nakayama ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Power Amplifier ◽  
Gan On Si

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator

2015 ◽  
Vol 63 (8) ◽  
pp. 2589-2602 ◽  
Author(s):  
Corrado Florian ◽  
Tommaso Cappello ◽  
Rudi Paolo Paganelli ◽  
Daniel Niessen ◽  
Fabio Filicori
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Envelope Tracking ◽  
High Power Amplifier ◽  
Digitally Controlled ◽  
Gan On Si ◽  
Si Supply

Design of Yb Fiber High Power Amplifier through 915nm Pumping

2011 ◽  
Vol 282-283 ◽  
pp. 42-46
Author(s):  
Zhi Qiang Zhang ◽  
Jian Hua Ren ◽  
Shu Qun Shen ◽  
Tong Gang Zhao
Keyword(s):  
Pump Power ◽  
Output Power ◽  
Power Amplifier ◽  
Rate Equation ◽  
High Power ◽  
Fiber Length ◽  
Gain Medium ◽  
Pump Source ◽  
High Power Amplifier ◽  
Single Emitter

Analyze the fiber amplified theory and obtain the transmission formula of pump and signal for the use of rate equation. In the experiment, take the Yb-doped double cladding fiber based on phosphor silicate as gain medium, high power single emitter in 915nm as pump source. According to gain fiber length obtained by the theory analyses, the output power achieves 20W above. Apply the cladding power stripper at the output end for stripping the remained pump power.

scholarly journals GaN Based HEMT Power Amplifier Design with 44.5dBm Output Power Operating at 5-7GHz

2021 ◽  
Vol 40 (4) ◽  
pp. 883-888
Author(s):  
Syed Mudassir Hussain ◽  
Talha Mir
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Frequency Band ◽  
High Power ◽  
Power Level ◽  
Output Power Level ◽  
Specific Power ◽  
Design System ◽  
High Power Amplifier ◽  
Simulation Results

The next-generation wireless communication systems including satellite, radar, and mobile communications need application-specific power amplifiers that can operate at very high frequencies and high power with the overall minimum power consumption from the system. To meet such stringent requirements there is a rising interest in amplifier designs based on GaN transistors. This paper presents an improved design of a high power amplifier based on GaN HEMT transistor operating at the frequency band 5GHz – 7GHz with optimized output power level. The presented design is based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript, we have considered the stability of the amplifier for the whole operating frequency band, its input and output matching impedance, gain, and maximum output power. The design of the Radio Frequency (RF) power amplifier and its overall performance are carried out using an advanced design system (ADS). The simulation results of the device stability and the output power level achieved provides a good comparison with the parameters and specifications of the device used. For better correlations in the simulation results and measurements, the accuracy of passive element designs are also considered. The simulation and experiment results show that the designed high power amplifier has achieved an output power level of 44.5 dBm at 1 dB compression point.

An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency

2018 ◽  
Author(s):  
Rocco Giofre ◽  
Ferdinando Costanzo ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Manuela Sotgia ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Power Added Efficiency ◽  
High Power Amplifier

scholarly journals X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

2018 ◽  
Vol 7 (5) ◽  
pp. 124-130 ◽  
Author(s):  
Y.-J. Lee ◽  
C.-Y. Chang ◽  
Y.-H. Chou ◽  
I-Y. Tarn ◽  
J. Y.-C. Yaung ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Maximum Output Power ◽  
Maximum Output ◽  
High Electron ◽  
Power Combining ◽  
Hybrid Power ◽  
High Power Amplifier ◽  
X Band

An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.

An Octave Bandwidth, High PAE, Linear, Class J GaN High Power Amplifier

2012 ◽  
Author(s):  
Kris Skowronski ◽  
Steve Nelson ◽  
Rajesh Mongia ◽  
Howard Sheehan ◽  
Sid Anderson
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Power Amplifier
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