Femtosecond laser patterning of Mo thin film on flexible substrate for CIGS solar cells

Author(s):  
Qiumei Bian ◽  
Xiaoming Yu ◽  
Baozhen Zhao ◽  
Zenghu Chang ◽  
Shuting Lei
2013 ◽  
Vol 14 (8) ◽  
pp. 1287-1292 ◽  
Author(s):  
Tai-Wook Kim ◽  
Jeong-Yun Lee ◽  
Do-Hun Kim ◽  
Heui-Jae Pahk

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.


Author(s):  
Marty W. DeGroot ◽  
Mike Mills ◽  
Narayan Ramesh ◽  
Minoru Sakuma ◽  
Lindsey A. Clark ◽  
...  

2016 ◽  
Vol 1 (6) ◽  
Author(s):  
Xi Zhang ◽  
Yinggang Huang ◽  
Hao Bian ◽  
Hewei Liu ◽  
Xuezhen Huang ◽  
...  

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.


2009 ◽  
Author(s):  
F. J. Pern ◽  
S. H. Glick ◽  
X. Li ◽  
C. DeHart ◽  
T. Gennett ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 7611-7618 ◽  
Author(s):  
Gwang Sun Jung ◽  
Sun Hong Mun ◽  
Donghyeop Shin ◽  
R. B. V. Chalapathy ◽  
Byung Tae Ahn ◽  
...  

Grain growth of CIGS thin film assisted by liquid CuIn from Cu/(In,Ga)2Se3 stacked precursor.


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