Fabrication of a smooth, large-grained Cu(In,Ga)Se2 thin film using a Cu/(In,Ga)2Se3 stacked precursor at low temperature for CIGS solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 7611-7618 ◽  
Author(s):  
Gwang Sun Jung ◽  
Sun Hong Mun ◽  
Donghyeop Shin ◽  
R. B. V. Chalapathy ◽  
Byung Tae Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Grain Growth ◽  
Cigs Thin Film ◽  
Cigs Solar Cells

Grain growth of CIGS thin film assisted by liquid CuIn from Cu/(In,Ga)2Se3 stacked precursor.

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Trap Density ◽  
Thin Film Solar Cells ◽  
Content Type ◽  
Cigs Thin Film ◽  
Absorbing Layer ◽  
Cigs Solar Cells

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

Effect of Na on lower open circuit voltage of flexible CIGS thin-film solar cells prepared by the low-temperature process

2012 ◽  
Vol 85 (5) ◽  
pp. 055806 ◽  
Author(s):  
Wei Liu ◽  
Jing-jing He ◽  
Zhi-guo Li ◽  
Wei-long Jiang ◽  
Jin-bo Pang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film ◽  
Low Temperature Process

scholarly journals Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

2018 ◽  
Vol 2018 ◽  
pp. 1-14 ◽  
Author(s):  
Kam Hoe Ong ◽  
Ramasamy Agileswari ◽  
Biancamaria Maniscalco ◽  
Panagiota Arnou ◽  
Chakrabarty Chandan Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Large Scale ◽  
Production Efficiency ◽  
Crystalline Silicon ◽  
Scale Up ◽  
Deposition Condition ◽  
Back Contact ◽  
Cigs Thin Film ◽  
Cigs Solar Cells

Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.

The effect of NaF precursors on low temperature growth of CIGS thin film solar cells on polyimide substrates

2009 ◽  
Vol 206 (5) ◽  
pp. 1049-1053 ◽  
Author(s):  
Raquel Caballero ◽  
Christian A. Kaufmann ◽  
Tobias Eisenbarth ◽  
Thomas Unold ◽  
Susan Schorr ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cigs Thin Film

Development of Manufacturing CIGS Thin Film Solar Cells Deposited on Polyimide

2014 ◽  
Vol 700 ◽  
pp. 161-169
Author(s):  
Ming Yu Han ◽  
Yu Dong Feng ◽  
Yi Wang ◽  
Zhi Min Wang ◽  
Hu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
High Quality ◽  
Polyimide Substrate ◽  
Manufacturing Technique ◽  
Cigs Thin Film ◽  
The Future

CIGS thin film solar cells on polyimide substrate was a significant developmental direction of solar cells and fabricating high quality CIGS thin film in low temperature was its pivotal technology. The development of manufacturing the CIGS thin film solar cells on polyimide substrate in low temperature was described. The specific principle, manufacturing technique and application prospect were also involved. The problem should be solved in the future progress of CIGS thin film on polyimide substrate was illustrated.

The influence of Na on low temperature growth of CIGS thin film solar cells on polyimide substrates

2009 ◽  
Vol 517 (7) ◽  
pp. 2187-2190 ◽  
Author(s):  
R. Caballero ◽  
C.A. Kaufmann ◽  
T. Eisenbarth ◽  
M. Cancela ◽  
R. Hesse ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cigs Thin Film

Effects of different Cs distribution in the film on the performance of CIGS thin film solar cells

2021 ◽  
Vol 222 ◽  
pp. 110917
Author(s):  
Shiqing Cheng ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
Zhichao He ◽  
Baolai Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film

scholarly journals Silver‐Promoted High‐Performance (Ag,Cu)(In,Ga)Se 2 Thin‐Film Solar Cells Grown at Very Low Temperature

Solar RRL ◽  
2021 ◽  
pp. 2100108
Author(s):  
Shih-Chi Yang ◽  
Jordi Sastre ◽  
Maximilian Krause ◽  
Xiaoxiao Sun ◽  
Ramis Hertwig ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Very Low Temperature
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