Stability of TCO window layers for thin-film CIGS solar cells upon damp heat exposures: part III

2009 ◽  
Author(s):  
F. J. Pern ◽  
S. H. Glick ◽  
X. Li ◽  
C. DeHart ◽  
T. Gennett ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Cigs Solar Cells

Application of a Sn4+ doped In2S3 thin film in a CIGS solar cell as a buffer layer

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
In2s3 Thin Film ◽  
Cigs Solar Cells

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.

Assembly processes for thin film CIGS solar cells: Approaches for improving interconnect repeatability and costs

2011 ◽  
Author(s):  
Marty W. DeGroot ◽  
Mike Mills ◽  
Narayan Ramesh ◽  
Minoru Sakuma ◽  
Lindsey A. Clark ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Cigs Solar Cells

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Trap Density ◽  
Thin Film Solar Cells ◽  
Content Type ◽  
Cigs Thin Film ◽  
Absorbing Layer ◽  
Cigs Solar Cells

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

Fabrication of a smooth, large-grained Cu(In,Ga)Se2 thin film using a Cu/(In,Ga)2Se3 stacked precursor at low temperature for CIGS solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 7611-7618 ◽  
Author(s):  
Gwang Sun Jung ◽  
Sun Hong Mun ◽  
Donghyeop Shin ◽  
R. B. V. Chalapathy ◽  
Byung Tae Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Grain Growth ◽  
Cigs Thin Film ◽  
Cigs Solar Cells

Grain growth of CIGS thin film assisted by liquid CuIn from Cu/(In,Ga)2Se3 stacked precursor.

scholarly journals Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence

2013 ◽  
Vol 1538 ◽  
pp. 27-32 ◽  
Author(s):  
Shirou Kawakita ◽  
Mitsuru Imaizumi ◽  
Shogo Ishizuka ◽  
Hajime Shibata ◽  
Shigeru Niki ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Thin Film Solar Cells ◽  
Electron Radiation ◽  
Small Grains ◽  
Cigs Solar Cells ◽  
Induced Defects

ABSTRACTCIGS solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cell, to reveal the radiation defect. The EL image of CIGS solar cells before electron irradiation at 120 K described small grains, thought to be those of the CIGS. After 250 keV electron irradiation of the CIGS cell, the cell was uniformly illuminated compared to before the electron irradiation and the observed grains were unclear. In addition, the EL intensity rose with increasing electron fluence, meaning the change in EL efficiency may be attributable to the decreased likelihood of non-irradiative recombination in intrinsic defects due to electron-induced defects. Since the light soaking effect for CIGS solar cells is reported the same phenomena, the 250 keV electron radiation effects for CIGS solar cells might be equivalent to the effect.

Effect of Location of Sodium Precursor on the Morphological and Device Properties of CIGS Solar Cells

2013 ◽  
Vol 1538 ◽  
pp. 51-60 ◽  
Author(s):  
Neelkanth G. Dhere ◽  
Ashwani Kaul ◽  
Helio Moutinho
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Cigs Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

ABSTRACTSodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well.

scholarly journals Effective module level encapsulation of CIGS solar cells with Al2O3 thin film grown by atomic layer deposition

2021 ◽  
Vol 222 ◽  
pp. 110914
Author(s):  
Shan-Ting Zhang ◽  
Maxim Guc ◽  
Oliver Salomon ◽  
Roland Wuerz ◽  
Victor Izquierdo-Roca ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells ◽  
Al2o3 Thin Film

scholarly journals Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

2018 ◽  
Vol 2018 ◽  
pp. 1-14 ◽  
Author(s):  
Kam Hoe Ong ◽  
Ramasamy Agileswari ◽  
Biancamaria Maniscalco ◽  
Panagiota Arnou ◽  
Chakrabarty Chandan Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Large Scale ◽  
Production Efficiency ◽  
Crystalline Silicon ◽  
Scale Up ◽  
Deposition Condition ◽  
Back Contact ◽  
Cigs Thin Film ◽  
Cigs Solar Cells

Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.

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