Microlens beam homogenizer for excimer laser processing

2016 ◽  
Vol 28 (2) ◽  
pp. 022601 ◽  
Author(s):  
Yuhua Jin ◽  
Yan Zhao ◽  
Yijian Jiang
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Beam Homogenizer

Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

2010 ◽  
Vol 97 (1) ◽  
pp. 014102 ◽  
Author(s):  
J. C. Conde ◽  
E. Martín ◽  
S. Chiussi ◽  
F. Gontad ◽  
C. Serra ◽  
...  
Keyword(s):  
Finite Element ◽  
Finite Element Simulation ◽  
Excimer Laser ◽  
Laser Processing ◽  
Element Simulation

Excimer Laser Processing of Nodular Iron

1994 ◽  
Vol 9 (3) ◽  
pp. 415-427 ◽  
Author(s):  
A. Fontes ◽  
M. Jeandin ◽  
Olivier Uteza ◽  
Marc Sentis ◽  
Michel Frainais
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Nodular Iron

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

2016 ◽  
Vol 362 ◽  
pp. 217-220 ◽  
Author(s):  
F. Gontad ◽  
J.C. Conde ◽  
S. Chiussi ◽  
C. Serra ◽  
P. González
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
193 Nm

Process diagnostics and control for excimer laser processing

1995 ◽  
Author(s):  
Karsten Schutte ◽  
Emil Schubert ◽  
Hans W. Bergmann
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Diagnostics And Control ◽  
Process Diagnostics ◽  
And Control

Influence of variations of temporal pulse shape in excimer laser processing of semiconductors

1994 ◽  
Vol 2 (2) ◽  
pp. 319-325 ◽  
Author(s):  
R. Černý ◽  
V. Vydra ◽  
K.M.A. El-Kader ◽  
V. Cháb
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Pulse Shape ◽  
Temporal Pulse

Excimer laser beam/ITO interaction: from laser processing to surface reaction

2008 ◽  
Vol 5 (10) ◽  
pp. 3248-3254 ◽  
Author(s):  
G. Legeay ◽  
X. Castel ◽  
R. Benzerga ◽  
J. Pinel
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Processing ◽  
Surface Reaction
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