Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering

1994 ◽  
Vol 358 ◽  
Author(s):  
S.M. Cho ◽  
D. Wolfe ◽  
S.S. He ◽  
K. Christensen ◽  
D.M. Maher ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Microstructural Characterization ◽  
High Energy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Transmission Electron ◽  
Partial Pressures

ABSTRACTSixGei1−x:H alloys which span the transition from amorphous to microcrystalline structures have been prepared by reactive magnetron sputtering (RMS) from pure crystalline Si and Ge targets in different partial pressures of hydrogen, using argon as the sputtering gas. Film properties were studied as a function of H2 flow and partial pressure. X-ray diffraction (XRD), Raman scattering, Fourier transform infrared spectroscopy (FTIR), reflection high-energy electron diffraction (RHEED), and high resolution transmission electron microscopy (HRTEM) have been used for microstructural characterization. Films prepared by RMS at a partial pressure of hydrogen (PH2) < ∼ 4 mTorr were amorphous, while those prepared with PH2 > ∼ 6 mTorr were microcrystalline.

Characterization of Ruo2 Films Prepared by Rf Reactive Magnetron Sputtering

1998 ◽  
Vol 541 ◽  
Author(s):  
Li-jian Meng ◽  
M.P. dos Santos
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Total Pressure ◽  
High Stress ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Partial Pressures

AbstractRuthenium dioxide films have been prepared by rf reactive magnetron sputtering at different oxygen partial pressures and total sputtering pressures. The films have been characterized by scanning electron microscopy, X-ray diffraction and electrical conductivity. The films prepared at low oxygen partial pressure and total pressure show a strong preferred orientation along the [110] direction. As both pressures increased, the peak intensity decreases. All the films are subject to a compressive stress. As the total pressure is decreased and the oxygen partial pressure is increased, the stress increases. When the total pressure is lower than 6 × 10−3 mbar and the oxygen partial pressure is higher than 1 × 103 mbar, the films peeled off automatically from the substrate because of the high stress. The films prepared at high oxygen partial pressure and high total pressure have a rough surface and those prepared at low pressure show smooth surface. In this paper, these phenomena have been discussed. In addition, the electrical properties of the films are also discussed.

Improving the Bonding Strength of Y2O3 Coatings on Steel Substrates through a YOX Adhesion Layer

2011 ◽  
Vol 686 ◽  
pp. 637-640 ◽  
Author(s):  
Wei Ling Lv ◽  
Jun Liu ◽  
Tao Tang ◽  
Ling Yang ◽  
Rong Lei ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Bonding Strength ◽  
Composite Coatings ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Partial Pressures ◽  
Steel Substrates

Y2O3/YOx composite coatings with different YOx adhesion layers were fabricated on 316L stainless steel substrates through reactive magnetron sputtering. The YOx adhesion layers were deposited by radio frequency reactive magnetron sputtering with different oxygen partial pressures at a total pressure of 1.2 Pa. The Y2O3 coatings were deposited by bipolar pulse reactive magnetron sputtering. The relationships between the microstructures, phase compositions, interfacial adhesion of the composite coatings and the oxygen partial pressure used for deposition of the YOx adhesion layers were investigated. The microstructures and phase compositions of the coatings were characterized by scanning electronic microscopy and X-ray diffraction. The bonding strength of the coatings was measured by scratch tester. The results showed that the bonding strength of the Y2O3/YOx composite coatings reached the maximum value when the oxygen partial pressure was 0.18 Pa.

Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)

1995 ◽  
Vol 405 ◽  
Author(s):  
S. M. Cho ◽  
K. Christensen ◽  
D. Wolfe ◽  
H. Ying ◽  
D. R. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Substrate Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Film Microstructure ◽  
Substrate Surfaces

AbstractWe have investigated on the effect of different substrate surfaces in changing the microstructure of μc-SixGe1-x:H films prepared by reactive magnetron sputtering. Films were deposited on hydrogen terminated Si(111), Si(100) surfaces, and surfaces chemical and plasma oxides. The thin film microstructure was characterized by Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and Raman scattering.

Growth and Characterization of Well-Aligned RuO2/R-TiO2 Heteronanostructures on Sapphire (100) Substrates by Reactive Magnetron Sputtering

2011 ◽  
Vol 170 ◽  
pp. 78-82
Author(s):  
Hung Pin Hsu ◽  
Ying Sheng Huang ◽  
Chien Nan Yeh ◽  
Yi Min Chen ◽  
Dah Shyang Tsai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Vertically Aligned ◽  
Xrd Patterns ◽  
Electron Diffractometry

We report the growth of well-aligned RuO2/R-TiO2 heteronanostructures on sapphire (100) substrates by reactive magnetron sputtering using Ti and Ru metal targets under different conditions. The surface morphology and structural properties of the as-deposited heteronanostructures were characterized using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffractometry (SAED). The FESEM micrographs and XRD patterns indicated the growth of vertically aligned RuO2(001) nanotubes and twinned V-shaped RuO2(101) nanowedges (NWs) on top of R-TiO2 nanorods under different sputtering pressures. TEM and SAED characterizations of the V-shaped RuO2 NWs showed that the NWs are crystalline RuO2 with twin planes of (101) and twin direction of [ 01] at the V-junction.

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

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