scholarly journals Total ionizing dose effects and radiation testing of complex multifunctional VLSI devices

2015 ◽  
Vol 28 (1) ◽  
pp. 153-164 ◽  
Author(s):  
Dmitry Boychenko ◽  
Oleg Kalashnikov ◽  
Alexander Nikiforov ◽  
Anastasija Ulanova ◽  
Dmitry Bobrovsky ◽  
...  

Total ionizing dose (TID) effects and radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional ?simple? ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.

MRS Bulletin ◽  
1993 ◽  
Vol 18 (6) ◽  
pp. 46-51 ◽  
Author(s):  
S.P. Murarka ◽  
J. Steigerwald ◽  
R.J. Gutmann

Continuing advances in the fields of very-large-scale integration (VLSI), ultralarge-scale integration (ULSI), and gigascale integration (GSI), leading to the continuing development of smaller and smaller devices, have continually challenged the fields of materials, processes, and circuit designs. The existing metallization schemes for ohmic contacts, gate metal, and interconnections are inadequate for the ULSI and GSI era. An added concern is the reliability of aluminum and its alloys as the current carrier. Also, the higher resistivity of Al and its use in two-dimensional networks have been considered inadequate, since they lead to unacceptably high values of the so-called interconnection delay or RC delay, especially in microprocessors and application-specific integrated circuits (ICs). Here, R refers to the resistance of the interconnection and C to the total capacitance associated with the interlayer dielectric. For the fastest devices currently available and faster ones of the future, the RC delay must be reduced to such a level that the contribution of RC to switching delays (access time) becomes a small fraction of the total, which is a sum of the inherent device delay associated with the semiconductor, the device geometry and type, and the RC delay.


2009 ◽  
Vol 6 (1) ◽  
pp. 38-41
Author(s):  
Lewis Dove

Mixed-signal Application Specific Integrated Circuits (ASICs) have traditionally been used in test and measurement applications for a variety of functions such as data converters, pin electronics circuitry, drivers, and receivers. Over the past several years, the complexity, power density, and bandwidth of these chips has increased dramatically. This has necessitated dramatic changes in the way these chips have been packaged. As the chips have become true VLSI (Very Large Scale Integration) ICs, the number of I/Os have become too large to interconnect with wire bonds. Thus, it has become necessary to utilize flip chip interconnects. Also, the bandwidth of the high-speed signal paths and clocks has increased into the multi Gbit or GHz ranges. This requires the use of packages with good high-frequency performance which are designed using microwave circuit techniques to optimize signal integrity and to minimize signal crosstalk and noise.


1982 ◽  
Vol 18 ◽  
Author(s):  
S. Simon Cohen

The problem of low resistance ohmic contacts to silicon has been of considerable technological interest. In recent years this problem has received special attention owing to the effect of scaling in very-large-scale integration (VLSI) technology. The field of ohmic contacts to semiconductors comprises two independent parts. First there exists the material science aspect. The choice of a suitable metallization system, the proper semiconductor parameters and the method of the contact formation is not obvious. Then there is the question of the proper definition of the contact resistance and the way it is measured.Several methods for contact resistance determination have been introduced in the past. All seem to have some drawbacks that either limit their usefulness or raise doubts as to their validity in certain situations. We shall discuss the two-, three- and four-terminal resistor methods of measurement. Relevant theoretical considerations will also be included.For conventional integrated circuits with a moderate junction depth of 1–2 μm, aluminum is uniquely suited as a single-element metallization system. However, for VLSI applications it may become obsolete because of several well-defined metallurgical problems. Thus, other metallization systems have to be investigated. We shall briefly discuss some recent data on several other metallization systems. Finally, the problem of size effects on the contact resistance will be discussed. Recent experimental results suggest important clues regarding the development of alternative metallization systems for VLSI circuits and also point to revisions of estimates of achievable design rules.


2008 ◽  
Vol 2008.8 (0) ◽  
pp. 147-148
Author(s):  
Hidekuni TAKAO ◽  
Nobuhiro TANAKA ◽  
Masanori SUGIURA ◽  
Kazuaki SAWADA ◽  
Makoto ISHIDA

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Masayoshi Esashi

AbstractI have been developing MEMS (microelectromechanical systems) technology and supporting the industry through collaboration. A facility was built in house on a 20 mm square wafer for use in prototyping MEMS and ICs (integrated circuits). The constructed MEMS devices include commercialized integrated capacitive pressure sensors, electrostatically levitated rotational gyroscopes, and two-axis optical scanners. Heterogeneous integration, which is a MEMS on an LSI (large-scale integration), was developed for sophisticated systems using LSI made in a foundry. This technology was applied for tactile sensor networks for safe robots, multi FBAR filters on LSI, active-matrix multielectron emitter arrays, and so on. The facility used to produce MEMS on 4- and 6-inch wafers was developed based on an old semiconductor factory and has been used as an open hands-on access facility by many companies. Future directions of MEMS research are discussed.


2017 ◽  
Author(s):  
Vinícius Dos Santos Livramento ◽  
José Luís Güntzel

The evolution of CMOS technology made possible integrated circuits with billions of transistors assembled into a single silicon chip, giving rise to the jargon Very-Large-Scale Integration (VLSI). VLSI circuits span a wide range class of applications, including Application Specific Circuits and Systems-On-Chip. The latter are responsible for fueling the consumer electronics market, especially in the segment of smartphones and tablets, which are responsible for pushing hardware performance requirements every new generation. The required clock frequency affects the performance of a VLSI circuit and induces timing constraints that must be properly handled by synthesis tools. This thesis focuses on techniques for timing closure of cellbased VLSI circuits, i.e. techniques able to iteratively reduce the number of timing violations until the synthesis of the synchronous digital system reaches the specified target frequency.


2014 ◽  
Vol 155 (26) ◽  
pp. 1011-1018 ◽  
Author(s):  
György Végvári ◽  
Edina Vidéki

Plants seem to be rather defenceless, they are unable to do motion, have no nervous system or immune system unlike animals. Besides this, plants do have hormones, though these substances are produced not in glands. In view of their complexity they lagged behind animals, however, plant organisms show large scale integration in their structure and function. In higher plants, such as in animals, the intercellular communication is fulfilled through chemical messengers. These specific compounds in plants are called phytohormones, or in a wide sense, bioregulators. Even a small quantity of these endogenous organic compounds are able to regulate the operation, growth and development of higher plants, and keep the connection between cells, tissues and synergy beween organs. Since they do not have nervous and immume systems, phytohormones play essential role in plants’ life. Orv. Hetil., 2014, 155(26), 1011–1018.


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