scholarly journals Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities

2014 ◽  
Vol 27 (3) ◽  
pp. 329-338 ◽  
Author(s):  
Armen Sogoyan ◽  
Alexey Artamonov ◽  
Alexander Nikiforov ◽  
Dmitry Boychenko
Keyword(s):  
Integrated Circuits ◽  
Hardness Testing ◽  
Total Ionizing Dose ◽  
X Ray ◽  
Step Algorithm ◽  
Irradiation Facilities

A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma- and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.

scholarly journals Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits

2018 ◽  
Vol 65 (1) ◽  
pp. 478-485 ◽  
Author(s):  
Stephen D. Lalumondiere ◽  
Erik C. Dillingham ◽  
Adam C. Scofield ◽  
Jeremy P. Bonsall ◽  
Petras Karuza ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Total Ionizing Dose ◽  
X Ray

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

scholarly journals Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2017 ◽  
Vol 17 (1) ◽  
pp. 59-68 ◽  
Author(s):  
Mahbub Alam ◽  
Haoting Shen ◽  
Navid Asadizanjani ◽  
Mark Tehranipoor ◽  
Domenic Forte
Keyword(s):  
Integrated Circuits ◽  
X Ray

Influence of High Temperature Annealing on Microstructure Evolution of Ni-24Fe-14Cr-8Mo Superalloy

2021 ◽  
Vol 904 ◽  
pp. 117-123
Author(s):  
Yi Cui ◽  
Yun Fei Zhang ◽  
Yan Guang Han ◽  
Da Lv
Keyword(s):  
High Temperature ◽  
Microstructure Evolution ◽  
Testing Machine ◽  
Aging Treatment ◽  
Growth Patterns ◽  
High Temperature Annealing ◽  
Rockwell Hardness ◽  
Hardness Testing ◽  
X Ray Diffraction ◽  
X Ray

The effect of high temperature annealing on microstructure evolution of Ni-24Fe-14Cr-8Mo alloy was investigated through Optical Microscopy (OM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Rockwell Hardness Testing Machine. Three kinds of grain growth patterns were found at different annealing temperatures due to carbides precipitation and dissolution. After a combination of high temperature annealing and aging treatment, the hardness versus time curves performed a parabolic pattern. The highest hardness was achieved under 1070°C/60 minutes treatment, and the desirable annealing time should be 60 minutes to 90 minutes.

The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer

2019 ◽  
Vol 100-101 ◽  
pp. 113355 ◽  
Author(s):  
Yannan Xu ◽  
Jinshun Bi ◽  
Yudong Li ◽  
Kai Xi ◽  
Linjie Fan ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Total Ionizing Dose ◽  
X Ray ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy

1993 ◽  
Vol 318 ◽  
Author(s):  
Joffre Bernard ◽  
Ercan Adem ◽  
Seshadri Ramaswami
Keyword(s):  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Ambient Air ◽  
Tin Films ◽  
X Ray ◽  
Surface And Interface ◽  
Surface Analysis Techniques ◽  
Contamination Levels ◽  
Reflective Coatings

ABSTRACTThe deposition and processing of thin films, such as barrier metals and anti-reflective coatings, can be enhanced using the information provided by various surface analysis techniques. We will show the application of x-ray photoelectron spectroscopy(XPS) to the production of Ti and TiN films suitable for use in ULSI CMOS integrated circuits. XPS can separate Ti and N photoelectron peaks and detect low (1.0-5.0 atomic%) contamination levels while providing surface and interface chemical state information. In this paper we will show that a) the effect of TiN deposition on subsequent Ti film quality from the same Ti target was determined to be minimal, b) the relation of anneal temperature to the extent of SiO2 reduction by Ti metal was characterized on SiO2/Ti/TiN structures for temperatures from 600°C to 800°C, and c) the absorption of O into TiN films from ambient air was detected and confirmed.

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