Liquid-encapsulated Czochralski growth of doped gallium-antimonide semiconductor crystals using a strong steady magnetic field

2005 ◽  
Vol 41 (1) ◽  
pp. 73-86 ◽  
Keyword(s):  
Magnetic Field ◽  
Gallium Antimonide ◽  
Czochralski Growth ◽  
Semiconductor Crystals ◽  
Steady Magnetic Field

Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals

2001 ◽  
Vol 123 (4) ◽  
pp. 893-898 ◽  
Author(s):  
Joseph L. Morton ◽  
Nancy Ma ◽  
David F. Bliss ◽  
George G. Bryant
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Dopant Concentration ◽  
Axial Magnetic Field ◽  
Compound Semiconductor ◽  
Czochralski Growth ◽  
Semiconductor Crystal ◽  
Semiconductor Crystals ◽  
Diffusion Controlled ◽  
Single Compound

During the magnetically-stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The melt is doped with an element in order to vary the electrical and/or optical properties of the crystal. During growth, the so-called melt-depletion flow caused by the opposing relative velocities of the encapsulant-melt interface and the crystal-melt interface can be controlled with an externally applied magnetic field. The convective dopant transport during growth driven by this melt motion produces nonuniformities of the dopant concentration in both the melt and the crystal. This paper presents a model for the unsteady transport of a dopant during the MLEC process with an axial magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth

2003 ◽  
Author(s):  
Lijun Liu ◽  
Koichi Kakimoto
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Czochralski Growth ◽  
Thermal Flow ◽  
Interface Shape ◽  
Convective Thermal ◽  
And Control ◽  
Crystal Interface

In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process.

Reduced Wettability of Solids by a Liquid Ga–In–Sn Alloy in a Steady Magnetic Field

2018 ◽  
Vol 122 (48) ◽  
pp. 27451-27455 ◽  
Author(s):  
Chuanjun Li ◽  
Yang Cao ◽  
Stephanie Lippmann ◽  
Zhongming Ren ◽  
Markus Rettenmayr
Keyword(s):  
Magnetic Field ◽  
Steady Magnetic Field
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