scholarly journals Visible laser diodes grown by molecular beam epitaxy.

1990 ◽  
Vol 18 (8) ◽  
pp. 588-591
Author(s):  
Kosei TAKAHASHI ◽  
Masahiro HOSODA ◽  
Atsuo TSUNODA ◽  
Sadayosi MATSUI ◽  
Toshiki HIJIKATA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Visible Laser

AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy

1992 ◽  
Vol 28 (18) ◽  
pp. 1735 ◽  
Author(s):  
A. Takamori ◽  
K. Idota ◽  
K. Uchiyama ◽  
T. Suzuki ◽  
R. Kikuchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Cladding Layer ◽  
Gas Source ◽  
Visible Laser

Visible Laser Diodes Prepared By Molecular Beam Epitaxy

2005 ◽  
Author(s):  
K. Takahashi ◽  
T. Hayakawa ◽  
T. Suyama ◽  
M. Kondo ◽  
M. Hosoda ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Visible Laser

scholarly journals Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

1997 ◽  
Vol 19 (4) ◽  
pp. 239-246
Author(s):  
K. K. Wu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Full Width Half Maximum ◽  
Laser Diodes ◽  
Gas Source ◽  
Visible Laser ◽  
Grade Index ◽  
Lattice Matched

Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-index separate- confinement heterostructure (GRIN-SCH) stained quantum well structure are characterized. Measurements of photoluminescence (PL) intensity, L-I curves and wavelength spectra of these two structures all exhibit lasing properties. At room temperature, it is found that induced lasing phenomena has a full width half maximum (FWHM) of 2.1 nm and 0.5 nm, respectively. The emitting wavelengths range from 6500 Å to 6850 Å.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

InGaN Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

2017 ◽  
pp. 321-360
Author(s):  
Czeslaw Skierbiszewski ◽  
Muziol Grzegorz ◽  
Turski Henryk ◽  
Siekacz Marcin ◽  
Marta Sawicka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

2012 ◽  
Vol 5 (11) ◽  
pp. 112103 ◽  
Author(s):  
Czeslaw Skierbiszewski ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Grzegorz Muziol ◽  
Marta Sawicka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
True Blue ◽  
Nitride Laser

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes

1999 ◽  
Vol 201-202 ◽  
pp. 877-881 ◽  
Author(s):  
M Toivonen ◽  
P Savolainen ◽  
S Orsila ◽  
V Vilokkinen ◽  
M Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Well Laser ◽  
Nm Range
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