scholarly journals Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

1997 ◽  
Vol 19 (4) ◽  
pp. 239-246
Author(s):  
K. K. Wu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Full Width Half Maximum ◽  
Laser Diodes ◽  
Gas Source ◽  
Visible Laser ◽  
Grade Index ◽  
Lattice Matched

Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-index separate- confinement heterostructure (GRIN-SCH) stained quantum well structure are characterized. Measurements of photoluminescence (PL) intensity, L-I curves and wavelength spectra of these two structures all exhibit lasing properties. At room temperature, it is found that induced lasing phenomena has a full width half maximum (FWHM) of 2.1 nm and 0.5 nm, respectively. The emitting wavelengths range from 6500 Å to 6850 Å.

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy

1992 ◽  
Vol 28 (18) ◽  
pp. 1735 ◽  
Author(s):  
A. Takamori ◽  
K. Idota ◽  
K. Uchiyama ◽  
T. Suzuki ◽  
R. Kikuchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Cladding Layer ◽  
Gas Source ◽  
Visible Laser

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1985 ◽  
Vol 47 (4) ◽  
pp. 394-396 ◽  
Author(s):  
H. Temkin ◽  
M. B. Panish ◽  
P. M. Petroff ◽  
R. A. Hamm ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source

Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy

1992 ◽  
Vol 120 (1-4) ◽  
pp. 180-183 ◽  
Author(s):  
C. Starck ◽  
J.-Y. Emery ◽  
R.J. Simes ◽  
M. Matabon ◽  
L. Goldstein ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Gas Source
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