scholarly journals Photochemical etching of copper thin films of circuit board in chlorine and trichloroethylene ambients with a KrF excimer laser.

1990 ◽  
Vol 18 (3) ◽  
pp. 146-152
Author(s):  
Koichi TOYODA ◽  
Ding Xiang WU ◽  
Mitsuhiro WAKE
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Circuit Board ◽  
Photochemical Etching ◽  
Krf Excimer Laser

Computer Simulation of Pulsed Laser Ablation for YBaCuO Superconducting Films

1990 ◽  
Vol 191 ◽  
Author(s):  
Toshiyuki Nakamiya ◽  
Kenji Ebihara ◽  
P. K. John ◽  
B. Y. Tong
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Energy ◽  
Pulsed Laser ◽  
The Finite Element Method ◽  
High Tc ◽  
One Dimensional ◽  
Incident Laser Energy ◽  
Krf Excimer Laser ◽  
Pulsed Laser Irradiation

ABSTRACTThe dynamics of melting and ablation of high Tc YBa2Cu3O7-x superconducting thin films flashed by a pulsed KrF excimer laser(λ=248nm) or a pulsed Nd-YAG laser (λ =1.06μ m) were studied numerically. The fundamental model during a pulsed laser irradiation was a one-dimensional heat conduction equation. The finite element method was applied to solve the equation including the temperature dependence of the thermal conductivity of YBaCuO thin films. In addition, the microstructure of YBa2Cu3O7-x bulk(l.5mm thick) flashed by a pulsed XeCl excimer laser (λ =308nm) was investigated by scanning electron microscopy (SEM) in order to estimate the threshold incident laser energy density for surface melting and ablation. The good agreements between the numerical calculations and the experimental results were obtained.

Preparation of PZT/YBCO/YAIO Heterostructure Thin Films by KrF Excimer Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Kenji Ebihara ◽  
Hiromnitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Ferroelectric Properties ◽  
Perovskite Oxide ◽  
Excimer Laser Ablation ◽  
Fatigue Characteristics ◽  
Krf Excimer Laser ◽  
Operation Frequency ◽  
Deposition Conditions

AbstractThe perovskite oxide YBa2Cu3O7-x (YBCO) and Pb(ZrxTi1-x)O3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200-600mTorr O2, 2-3J/cm2 and 5-10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO3:Nd show the zero resistivity critical temperature of 82K and excellent ferroelectric properties of remnant polarization 32 μC/cm2, coercive force of 80kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed.

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Enhanced Crystallization of Strontium Bismuth Tantalate Thin Films by Irradiation of Elongated Pulses of KrF Excimer Laser

2006 ◽  
Vol 45 (3A) ◽  
pp. 1689-1693
Author(s):  
Masashi Tsubuku ◽  
Kwang Soo Seol ◽  
In-Hoon Choi ◽  
Yoshimichi Ohki
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Strontium Bismuth Tantalate ◽  
Krf Excimer Laser

Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Ablation of Graphite in Nitrogen Atmosphere

1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Pressure ◽  
Laser Wavelength ◽  
Nitrogen Atmosphere ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
Krf Excimer Laser

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.

KrF excimer laser deposition of titanium thin films on silicon substrates

1998 ◽  
Author(s):  
Luowen Lu ◽  
Yongfeng Lu ◽  
Minghui Hong ◽  
T. M. Ho ◽  
Tohsiew Low
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Titanium Thin Films ◽  
Krf Excimer Laser

Excimer Laser Liftoff of Epitaxial Pb(Zr,Ti)O3 Thin Films and Heterostructures

1999 ◽  
Vol 596 ◽  
Author(s):  
L. Tsakalakos ◽  
T. Sands
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Short Pulse ◽  
Pulse Length ◽  
Transient Liquid Phase ◽  
Film Stress ◽  
Growth Substrate ◽  
Localized Heating ◽  
Krf Excimer Laser ◽  
Local Relaxation

AbstractEpitaxial (100) and (111)-oriented Pb(Zr,Ti)O3-based thin films and heterostructures have been transferred intact from their sapphire and MgO growth substrates to silicon and polymer substrates utilizing a novel laser liftoff process. The heterostructures, while on their growth substrate, were bonded to the receptor substrates using one of several bonding methods, including van der Waals bonding to an elastomer receptor, and transient liquid-phase Pd-In bonding to Si. A single 38 ns pulse from a KrF excimer laser (<,= 248 nm) directed through the transparent growth substrate induced localized heating of the perovskite interfacial layer. At fluences corresponding to the onset of vaporization (>300 mJ/cm2), the sapphire or MgO substrate was detached. Because of the short pulse length and the low thermal conductivity of Pb-based perovskite phases, heating of the top surface of the heterostructure was minimal, thus permitting film transfer to thermally-sensitive receptor substrates. X-ray rocking curves revealed slight broadening of the principal PLZT diffraction peaks (∼10–20%), suggesting local relaxation of film stress.

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser
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