scholarly journals Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

2010 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Sylvie Aubry ◽  
Eric Arthur Shaner ◽  
Michael P. Siegal ◽  
Qiming Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Transport ◽  
Failure Mechanisms ◽  
Gan Nanowires

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Electrical Transport and Optical Properties of Carbon Nanotubes probed by In Situ and Cross-Correlated Experiments

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
M Kobylko ◽  
M Kociak ◽  
K Suenaga ◽  
A-M Bonnot ◽  
A Débarre ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Optical Properties ◽  
Electrical Transport

Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

2017 ◽  
Vol 122 (20) ◽  
pp. 205302 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Tongbo Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Gan Nanowires

Electrical transport properties of EuTe under high pressure

2021 ◽  
Author(s):  
Yuqiang Li ◽  
Jingxia Liu ◽  
Peiguang Zhang ◽  
Qiang Jing ◽  
Xiaofeng Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
Optical Properties ◽  
Transport Properties ◽  
First Principles ◽  
Electrical Transport ◽  
Structural Transition ◽  
Electrical Transport Properties ◽  
Electronic And Optical Properties

The pressure-induced electronic and optical properties of EuTe are investigated up to 35.6 GPa. It is found that EuTe undergoes a pressure-induced NaCl-CsCl structural transition above 13 GPa by first-principles...

Regulating the electronic and optical properties of GaN/InN core/shell nanowires: A first-principles study

2020 ◽  
Vol 34 (25) ◽  
pp. 2050214 ◽  
Author(s):  
Chang Liu ◽  
Enling Li ◽  
Tuo Peng ◽  
Kaifei Bai ◽  
Yanpeng Zheng ◽  
...  
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Core Shell ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Gan Nanowires ◽  
The Core ◽  
Light Region ◽  
Calculation Results ◽  
Shell Nanowires

In this paper, electronic and optical properties of GaN/InN core/shell nanowires (CSNWs) have been theoretically investigated through the first principles calculations. The binding energy of In and N atoms on surface of six crystal planes along the [Formula: see text]-axis of GaN nanowires are all negative, which indicate that In and N atoms can be effectively deposited on the surface of GaN nanowires and preparing GaN/InN CSNWs is feasible theoretically. Calculation results of electronic properties indicate that the core/shell ratio and diameter of GaN/InN CSNWs have significant effect on the band structure, bandgap can be effectively adjusted when keeping the number of GaN layers unchanged and changing the number of InN layers. Moreover, with the increase in the number of InN layers, the absorption spectrum of GaN/InN CSNW has significant redshift and few weak absorption peaks appear in the visible light region.

scholarly journals Crystallographic orientation control and optical properties of GaN nanowires

RSC Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 2181-2187 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Jianchang Yan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Gan Nanowires

We employ a versatile strategy to manipulate the crystallographic orientation of GaN NWs in a VLS-HVPE process.

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

2016 ◽  
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
I. V. Ilkiv ◽  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Mbe Growth ◽  
Gan Nanowires
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