Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

2017 ◽  
Vol 122 (20) ◽  
pp. 205302 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Tongbo Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Gan Nanowires

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Microstructure and optical properties of ELO-GaN layers grown by hydride vapor phase epitaxy

2018 ◽  
pp. 321-324
Author(s):  
S Gradecak ◽  
M Albrecht ◽  
H P Strunk ◽  
D Martin ◽  
J Napierala ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Microstructure and Optical Properties of Nonpolarm-Plane GaN Films Grown onm-Plane Sapphire by Hydride Vapor Phase Epitaxy

2008 ◽  
Vol 47 (5) ◽  
pp. 3346-3349 ◽  
Author(s):  
Tongbo Wei ◽  
Ruifei Duan ◽  
Junxi Wang ◽  
Jinmin Li ◽  
Ziqiang Huo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

2006 ◽  
Vol 99 (11) ◽  
pp. 116103 ◽  
Author(s):  
D. Y. Song ◽  
V. Kuryatkov ◽  
M. Basavaraj ◽  
D. Rosenbladt ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electrical And Optical Properties

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

2012 ◽  
Vol 15 (1) ◽  
pp. 15-19 ◽  
Author(s):  
Qiang Hu ◽  
Tongbo Wei ◽  
Ruifei Duan ◽  
Jiankun Yang ◽  
Ziqiang Huo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Optical properties of GaN grown by hydride vapor-phase epitaxy

2001 ◽  
Vol 78 (3) ◽  
pp. 273-275 ◽  
Author(s):  
Eunsoon Oh ◽  
S. K. Lee ◽  
S. S. Park ◽  
K. Y. Lee ◽  
I. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 622 ◽  
Author(s):  
Shulin Gu ◽  
Rong Zhang ◽  
Ling Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Initial Growth ◽  
Lateral Growth ◽  
Subsequent Step ◽  
Lateral Growth Rate ◽  
High Supersaturation ◽  
Optimal Material

ABSTRACTThe initial stage of hydride vapor phase epitaxy GaN growth on ZnO-buffered sapphire is reported. A high supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent step with high lateral growth rate was chosen to promote coalescence of the initial islands and provide optimal material properties. The specific mole fractions of the GaCl and NH3 control these vertical and lateral growth rates. The use of a two- step growth process in the GaN growth has led to improved and controlled morphology and high quality GaN materials have then been grown on sapphire substrate with and without ZnO buffer layers.

Optical properties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl2O4 substrate

1998 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
S. T. Kim ◽  
Y. J. Lee ◽  
D. C. Moon ◽  
C. Lee ◽  
H. Y. Park
Keyword(s):  
Optical Properties ◽  
Thick Film ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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