scholarly journals Crystallographic orientation control and optical properties of GaN nanowires

RSC Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 2181-2187 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Jianchang Yan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Gan Nanowires

We employ a versatile strategy to manipulate the crystallographic orientation of GaN NWs in a VLS-HVPE process.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

2010 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Sylvie Aubry ◽  
Eric Arthur Shaner ◽  
Michael P. Siegal ◽  
Qiming Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Transport ◽  
Failure Mechanisms ◽  
Gan Nanowires

Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

2017 ◽  
Vol 122 (20) ◽  
pp. 205302 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Tongbo Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Gan Nanowires

scholarly journals LaTiO2N crystallographic orientation control significantly increases visible-light induced charge extraction

2020 ◽  
Vol 8 (43) ◽  
pp. 22867-22873
Author(s):  
Eric Burns ◽  
Ulrich Aschauer ◽  
Max Döbeli ◽  
Christof W. Schneider ◽  
Daniele Pergolesi ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Induced Charge ◽  
Charge Extraction

Visible-light induced photocharge extraction in LaTiO2N photoanodes increases by a significant 30% between (001) and (011) oriented thin-film samples.

Regulating the electronic and optical properties of GaN/InN core/shell nanowires: A first-principles study

2020 ◽  
Vol 34 (25) ◽  
pp. 2050214 ◽  
Author(s):  
Chang Liu ◽  
Enling Li ◽  
Tuo Peng ◽  
Kaifei Bai ◽  
Yanpeng Zheng ◽  
...  
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Core Shell ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Gan Nanowires ◽  
The Core ◽  
Light Region ◽  
Calculation Results ◽  
Shell Nanowires

In this paper, electronic and optical properties of GaN/InN core/shell nanowires (CSNWs) have been theoretically investigated through the first principles calculations. The binding energy of In and N atoms on surface of six crystal planes along the [Formula: see text]-axis of GaN nanowires are all negative, which indicate that In and N atoms can be effectively deposited on the surface of GaN nanowires and preparing GaN/InN CSNWs is feasible theoretically. Calculation results of electronic properties indicate that the core/shell ratio and diameter of GaN/InN CSNWs have significant effect on the band structure, bandgap can be effectively adjusted when keeping the number of GaN layers unchanged and changing the number of InN layers. Moreover, with the increase in the number of InN layers, the absorption spectrum of GaN/InN CSNW has significant redshift and few weak absorption peaks appear in the visible light region.

Nanopatterning of graphene with crystallographic orientation control

Carbon ◽  
2010 ◽  
Vol 48 (10) ◽  
pp. 2677-2689 ◽  
Author(s):  
László P. Biró ◽  
Philippe Lambin
Keyword(s):  
Crystallographic Orientation ◽  
Orientation Control

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

2016 ◽  
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
I. V. Ilkiv ◽  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Mbe Growth ◽  
Gan Nanowires

First-principle study on electronic structure and optical properties of GaN nanowires with different cross-sections

2016 ◽  
Vol 30 (22) ◽  
pp. 1650136
Author(s):  
Yike Kong ◽  
Lei Liu ◽  
Sihao Xia ◽  
Honggang Wang ◽  
Meishan Wang
Keyword(s):  
Optical Properties ◽  
Cross Sections ◽  
Formation Energy ◽  
Comparative Investigation ◽  
Dielectric Constants ◽  
Cross Sectional ◽  
Gan Nanowires ◽  
Bulk Gan ◽  
Structure Density ◽  
The Stability

This paper explores the properties of intrinsic gallium nitride (GaN) nanowires (NWs) in terms of formation energy, band structure, density of state (DOS) and optical properties with plane-wave ultrasoft pseudopotential method based on first-principles. Results show that after relaxation, N atoms of the outer layers move outwards, while Ga atoms move inwards, and the relaxation of surface atomic structure appears less obvious with the increasing cross-sectional area. Comparing different cross-sections of GaN NWs, it is found that the formation energy decreases and the stability goes stronger with the increasing size. With the increasing cross-section, the bandgap is decreased. Moreover, through comparative investigation in optical properties between GaN NWs and bulk GaN, a valuable phenomenom is found that the static dielectric constants of GaN NWs are notably lower, which contributes remarkably to the excellent absorbing performance of GaN NWs.

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