scholarly journals Application of High-Speed Infrared Imaging to Study Transient Joule Heating in Station Class Zinc Oxide Surge Arresters

2004 ◽  
Author(s):  
R. B. Dinwiddie ◽  
H. Wang ◽  
B. Johnnerfelt
Keyword(s):  
Zinc Oxide ◽  
Joule Heating ◽  
High Speed ◽  
Infrared Imaging ◽  
Surge Arresters

A High-Voltage High-Speed AC Switch Based on Controlled Vacuum Surge Arresters

2018 ◽  
Vol 4 (4) ◽  
pp. 4-13
Author(s):  
Vladimir A. SIDOROV ◽  
◽  
Gennady D. DOMASHENKO ◽  
Marat R. AKHMETGAREYEV ◽  
Yurii V. SHCHERBAKOV ◽  
...  
Keyword(s):  
High Voltage ◽  
High Speed ◽  
Surge Arresters

Analytical and Experimental Approach to the Voltage Distribution on Gapless Zinc-Oxide Surge Arresters

1981 ◽  
Vol PER-1 (11) ◽  
pp. 41-42 ◽  
Author(s):  
M. Oyama ◽  
I. Ohshima ◽  
M. Honda ◽  
M. Yamashita ◽  
S. Kojima
Keyword(s):  
Zinc Oxide ◽  
Experimental Approach ◽  
Voltage Distribution ◽  
Surge Arresters

Development of advanced built-in surge arresters for distribution system with new zinc-oxide elements

2001 ◽  
Vol 16 (4) ◽  
pp. 576-581 ◽  
Author(s):  
M. Hama ◽  
H. Ishizaka ◽  
J. Shimizu ◽  
S. Nishiki ◽  
I. Kaku
Keyword(s):  
Zinc Oxide ◽  
Distribution System ◽  
Surge Arresters

InGaAs based heterojunction phototransistors: Viable solution for high-speed and low-noise short wave infrared imaging

2019 ◽  
Vol 114 (16) ◽  
pp. 161101 ◽  
Author(s):  
Mohsen Rezaei ◽  
Min-Su Park ◽  
Cobi Rabinowitz ◽  
Chee Leong Tan ◽  
Skylar Wheaton ◽  
...  
Keyword(s):  
High Speed ◽  
Infrared Imaging ◽  
Short Wave ◽  
Low Noise ◽  
Viable Solution ◽  
Short Wave Infrared

Effect of Through-Silicon-Via Joule Heating on Device Performance for Low-Powered Mobile Applications

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Fahad Mirza ◽  
Gaurang Naware ◽  
Ankur Jain ◽  
Dereje Agonafer
Keyword(s):  
Joule Heating ◽  
Mobile Applications ◽  
High Speed ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Junction Temperature ◽  
Device Performance ◽  
Through Silicon Via ◽  
Heterogeneous Devices ◽  
Efficient Integration

Three-dimensional (3D) through-silicon-via (TSV) technology is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. TSVs provide high speed signal propagation due to reduced interconnect lengths as compared to wire-bonding. The current flowing through the TSVs results in localized heat generation (joule heating), which could be detrimental to the device performance. The effect of joule heating on performance measured by transconductance, electron mobility (e− mobility), and channel thermal noise is presented. Results indicate that joule heating has a significant effect on the junction temperature and subsequently results in 10–15% performance hit.

Optimization of corrugated QWIPs for high-speed infrared imaging

2004 ◽  
Author(s):  
Kwong-Kit Choi ◽  
Kok Ming Leung ◽  
Theodor Tamir ◽  
Carlos Monroy ◽  
F. Wang ◽  
...  
Keyword(s):  
High Speed ◽  
Infrared Imaging
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