In this paper, we present the imaging parameters and compare both mercuric iodide (HgI2)
and amorphous selenium (a-Se) films. Using MCNPX code, we designed the film structure and its
thickness for the optimized detector in the diagnostic x-ray range. The mercuric iodide film was
formed by a wet binder process, while the amorphous selenium film was deposited by physical vapor
deposition (PVD). These deposition methods are capable of being scaled up to sizes required in
diagnostic imaging applications. The electronic properties are investigated using dark current, x-ray
sensitivity and signal to noise ratio (SNR). From our results, the developed HgI2 film as an alternative
to a-Se photoconductor, which is in practical use in flat panel x-ray imaging detector, will prove its
usefulness in the future design and the optimization for various diagnostic modalities.