Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications

Converting Films for X-Ray Detectors, Applied to Amorphous Silicon Arrays.

MRS Proceedings ◽

10.1557/proc-487-393 ◽

1997 ◽

Vol 487 ◽

Cited By ~ 1

Author(s):

S. Ross ◽

G. Zentai

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Protein Crystallography ◽

Large Area ◽

X Ray ◽

X Ray Imaging ◽

Semiconductor Thin Films ◽

Area X ◽

Silicon Arrays

AbstractThis paper presents results from our on-going efforts to characterize semiconductor thin films for direct x-ray conversion. We deposit these thin films onto an amorphous silicon (a-Si:H) readout array with the overall goal of developing a large area x-ray detector for protein crystallography, and for other x-ray imaging fields.

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Electronic noise comparison of amorphous silicon current mode and voltage mode active pixel sensors for large area digital x-ray imaging

10.1117/12.845561 ◽

2010 ◽

Author(s):

Dali Wu ◽

Nader Safavian ◽

Mohammad Y. Yazdandoost ◽

Mohammad Hadi Izadi ◽

Karim S. Karim

Keyword(s):

Amorphous Silicon ◽

Current Mode ◽

Electronic Noise ◽

Large Area ◽

Active Pixel Sensors ◽

X Ray ◽

Voltage Mode ◽

X Ray Imaging ◽

Active Pixel ◽

Pixel Sensors

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WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

Medical Physics ◽

10.1118/1.4889453 ◽

2014 ◽

Vol 41 (6Part29) ◽

pp. 509-510 ◽

Cited By ~ 1

Author(s):

J Scheuermann ◽

A Goldan ◽

O Tousignant ◽

S Leveille ◽

W Zhao

Keyword(s):

Low Dose ◽

Amorphous Selenium ◽

Large Area ◽

X Ray ◽

X Ray Imaging

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Considerations for High Frame Rate Operation of Two-Dimensional a-Si:H Imaging Arrays

MRS Proceedings ◽

10.1557/proc-297-945 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 14

Author(s):

L.E. Antonuk ◽

J. Yorkston ◽

W. Huang ◽

J. Siewerdsen ◽

R.A. Street

Keyword(s):

Amorphous Silicon ◽

Frame Rate ◽

Two Dimensional ◽

Large Area ◽

Array Design ◽

Imaging Arrays ◽

X Ray ◽

High Frame Rate ◽

X Ray Imaging ◽

Silicon Arrays

Large area, two-dimensional, amorphous silicon arrays are under development for x-ray imaging applications. Theoretical limits on frame rates imposed by array design and operational requirements are examined. Measurements of image lag as a function of frame rate are reported.

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A new generation of direct X-ray detectors for medical and synchrotron imaging applications

Scientific Reports ◽

10.1038/s41598-020-76647-5 ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

A. Datta ◽

Z. Zhong ◽

S. Motakef

Keyword(s):

Performance Metrics ◽

High Energy ◽

Amorphous Selenium ◽

Semiconductor Detectors ◽

Large Area ◽

Lead Iodide ◽

X Ray ◽

X Ray Imaging ◽

Area X ◽

New Generation

AbstractLarge-area X-ray imaging is one of the most widely used imaging modalities that spans several scientific and technological fields. Currently, the direct X-ray conversion materials that are being commercially used for large-area (> 8 cm × 4 cm without tiling) flat panel applications, such as amorphous selenium (a-Se), have usable sensitivities of up to only 30 keV. Although there have been many promising candidates (such as polycrystalline HgI2 and CdTe), none of the semiconductors were able to assuage the requirement for high energy (> 40 keV) large-area X-ray imaging applications due to inadequate cost, manufacturability, and long-term performance metrics. In this study, we successfully demonstrate the potential of the hybrid Methylammonium lead iodide (MAPbI3) perovskite-based semiconductor detectors in satisfying all the requirements for its successful commercialization in synchrotron and medical imaging. This new generation of hybrid detectors demonstrates low dark current under electric fields needed for high sensitivity X-ray imaging applications. The detectors have a linear response to X-ray energy and applied bias, no polarization effects at a moderate bias, and signal stability over long usage durations. Also, these detectors have demonstrated a stable detection response under BNL’s National Synchrotron Light Source II (NSLS-II) 70 keV monochromatic synchrotron beamline.

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Discovery of recombining plasma inside the extended gamma-ray supernova remnant HB9

Monthly Notices of the Royal Astronomical Society ◽

10.1093/mnras/stz2461 ◽

2019 ◽

Vol 489 (3) ◽

pp. 4300-4310 ◽

Cited By ~ 5

Author(s):

A Sezer ◽

T Ergin ◽

R Yamazaki ◽

H Sano ◽

Y Fukui

Keyword(s):

Supernova Remnant ◽

Gamma Ray ◽

Radio Continuum ◽

Continuum Emission ◽

Large Area ◽

Imaging Spectrometer ◽

X Ray ◽

East Region ◽

X Ray Imaging ◽

Collisional Ionization

ABSTRACT We present the results from the Suzaku X-ray Imaging Spectrometer observation of the mixed-morphology supernova remnant (SNR) HB9 (G160.9+2.6). We discovered recombining plasma (RP) in the western Suzaku observation region and the spectra here are well described by a model having collisional ionization equilibrium (CIE) and RP components. On the other hand, the X-ray spectra from the eastern Suzaku observation region are best reproduced by the CIE and non-equilibrium ionization model. We discuss possible scenarios to explain the origin of the RP emission based on the observational properties and concluded that the rarefaction scenario is a possible explanation for the existence of RP. In addition, the gamma-ray emission morphology and spectrum within the energy range of 0.2–300 GeV are investigated using 10 yr of data from the Fermi Large Area Telescope (LAT). The gamma-ray morphology of HB9 is best described by the spatial template of radio continuum emission. The spectrum is well fit to a log-parabola function and its detection significance was found to be 25σ. Moreover, a new gamma-ray point source located just outside the south-east region of the SNR’s shell was detected with a significance of 6σ. We also investigated the archival H i and CO data and detected an expanding shell structure in the velocity range of $-10.5$ and $+1.8$ km s−1 that is coinciding with a region of gamma-ray enhancement at the southern rim of the HB9 shell.

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Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

MRS Proceedings ◽

10.1557/proc-1066-a16-07 ◽

2008 ◽

Vol 1066 ◽

Author(s):

Kyung-Wook Shin ◽

Mohammad R. Esmaeili-Rad ◽

Andrei Sazonov ◽

Arokia Nathan

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Threshold Voltage ◽

Hydrogenated Amorphous Silicon ◽

Nanocrystalline Silicon ◽

Amorphous Selenium ◽

Breakdown Field ◽

Storage Capacitor ◽

X Ray ◽

Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

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