scholarly journals Excimer laser annealing to fabricate low cost solar cells. Quarterly technical report No. 1, 26 March-30 June 1984

1984 ◽  
Author(s):  
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Low Cost ◽  
Excimer Laser Annealing ◽  
Technical Report

Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

1995 ◽  
Vol 397 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
B. Godard ◽  
J.L. Stehle
Keyword(s):  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Low Cost ◽  
Structural Quality ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Medium Temperature ◽  
Glass Substrates

ABSTRACTPECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.

scholarly journals Precision excimer laser annealed Ga-doped ZnO electron transport layers for perovskite solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (32) ◽  
pp. 17694-17701 ◽  
Author(s):  
Rui Xia ◽  
Guangyue Yin ◽  
Shimao Wang ◽  
Weiwei Dong ◽  
Libing You ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Zno Films ◽  
Excimer Laser Annealing ◽  
Doped Zno

Excimer laser annealing technique is successfully applied in treating Ga doped ZnO films as an efficient way to enhance the properties of the electron transport layer for the planar structured perovskite solar cells.

scholarly journals Optimisation of ITO by Excimer Laser Annealing for a-Si:H/c-Si Solar Cells

2012 ◽  
Vol 27 ◽  
pp. 586-591 ◽  
Author(s):  
S. Martín de Nicolás ◽  
D. Muñoz ◽  
C. Denis ◽  
J.F. Lerat ◽  
T. Emeraud
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Solar Cells

Nickel silicide contacts formed by excimer laser annealing for high efficiency solar cells

2013 ◽  
Vol 21 (3) ◽  
pp. 267-275 ◽  
Author(s):  
Loic Tous ◽  
Jean-Francois Lerat ◽  
Thierry Emeraud ◽  
Razvan Negru ◽  
Karim Huet ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
High Efficiency ◽  
Nickel Silicide ◽  
Excimer Laser Annealing ◽  
High Efficiency Solar Cells

Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With A XeCl Excimer Laser And Solar Cells

1982 ◽  
Vol 13 ◽  
Author(s):  
R. T. Young ◽  
J. Narayan ◽  
W. H. Christie ◽  
G. A. van der LEEDEN ◽  
D. E. Rothe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Lasers ◽  
Xecl Laser ◽  
Semiconductor Processing ◽  
Sheet Resistivity ◽  
Excimer Laser Annealing ◽  
Dopant Profile ◽  
Xecl Excimer Laser

ABSTRACTThe advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AMI have been fabricated using glow discharge implantation and XeCl laser annealing.

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

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