Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With A XeCl Excimer Laser And Solar Cells

1982 ◽  
Vol 13 ◽  
Author(s):  
R. T. Young ◽  
J. Narayan ◽  
W. H. Christie ◽  
G. A. van der LEEDEN ◽  
D. E. Rothe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Lasers ◽  
Xecl Laser ◽  
Semiconductor Processing ◽  
Sheet Resistivity ◽  
Excimer Laser Annealing ◽  
Dopant Profile ◽  
Xecl Excimer Laser

ABSTRACTThe advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AMI have been fabricated using glow discharge implantation and XeCl laser annealing.

In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1614-1617
Author(s):  
Cheol-Min Park ◽  
Byung-Hyuk Min ◽  
Juhn-Suk Yoo ◽  
Hong-Seok Choi ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Gate Oxide ◽  
Excimer Laser Annealing ◽  
In Situ Fabrication ◽  
Xecl Excimer Laser

6.4: Crystallization of Ultra-low Temperature ITO by XeCl Excimer Laser Annealing

2002 ◽  
Vol 33 (1) ◽  
pp. 57 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

1986 ◽  
Vol 71 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Processing Temperature ◽  
Excimer Laser Annealing ◽  
Channel Mobility ◽  
First Time ◽  
Xecl Excimer Laser

AbstractMo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

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