Nickel silicide contacts formed by excimer laser annealing for high efficiency solar cells

2013 ◽  
Vol 21 (3) ◽  
pp. 267-275 ◽  
Author(s):  
Loic Tous ◽  
Jean-Francois Lerat ◽  
Thierry Emeraud ◽  
Razvan Negru ◽  
Karim Huet ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
High Efficiency ◽  
Nickel Silicide ◽  
Excimer Laser Annealing ◽  
High Efficiency Solar Cells

scholarly journals Nickel Silicide Formation Using Excimer Laser Annealing

2012 ◽  
Vol 27 ◽  
pp. 503-509 ◽  
Author(s):  
L. Tous ◽  
J-F Lerat ◽  
T. Emeraud ◽  
R. Negru ◽  
K. Huet ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Excimer Laser Annealing

scholarly journals Precision excimer laser annealed Ga-doped ZnO electron transport layers for perovskite solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (32) ◽  
pp. 17694-17701 ◽  
Author(s):  
Rui Xia ◽  
Guangyue Yin ◽  
Shimao Wang ◽  
Weiwei Dong ◽  
Libing You ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Zno Films ◽  
Excimer Laser Annealing ◽  
Doped Zno

Excimer laser annealing technique is successfully applied in treating Ga doped ZnO films as an efficient way to enhance the properties of the electron transport layer for the planar structured perovskite solar cells.

scholarly journals Optimisation of ITO by Excimer Laser Annealing for a-Si:H/c-Si Solar Cells

2012 ◽  
Vol 27 ◽  
pp. 586-591 ◽  
Author(s):  
S. Martín de Nicolás ◽  
D. Muñoz ◽  
C. Denis ◽  
J.F. Lerat ◽  
T. Emeraud
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Solar Cells

Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With A XeCl Excimer Laser And Solar Cells

1982 ◽  
Vol 13 ◽  
Author(s):  
R. T. Young ◽  
J. Narayan ◽  
W. H. Christie ◽  
G. A. van der LEEDEN ◽  
D. E. Rothe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Lasers ◽  
Xecl Laser ◽  
Semiconductor Processing ◽  
Sheet Resistivity ◽  
Excimer Laser Annealing ◽  
Dopant Profile ◽  
Xecl Excimer Laser

ABSTRACTThe advantages of pulsed excimer lasers for semiconductor processing are reviewed. Studies of XeCl excimer laser annealing with pulses of 25 and 70 nsec duration and energy densities in the range from 0.5–3.0 J/cm2 are discussed. The annealing characteristics are described in terms of the results of melt depth, dopant profile spreading, and electrical properties (sheet resistivity, diode characteristics) measurements. Solar cells with efficiencies as high as 16.7% AMI have been fabricated using glow discharge implantation and XeCl laser annealing.

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