scholarly journals Heterostructure single-crystal silicon photovoltaic cell. Type A, semiconductor heterojunction silicon devices. Annual report, September 28, 1976-November 30, 1977

1977 ◽  
Author(s):  
A.K. Ghosh ◽  
T. Feng ◽  
C. Fishman
Keyword(s):  
Single Crystal ◽  
Annual Report ◽  
Single Crystal Silicon ◽  
Type A ◽  
Photovoltaic Cell ◽  
Cell Type ◽  
Crystal Silicon ◽  
Silicon Devices

Interfacial Defect Control for Infrared Conversion Widening of Silicon Single-Crystal Solar Cells

1995 ◽  
Vol 405 ◽  
Author(s):  
Z. T. Kuznicki
Keyword(s):  
Single Crystal ◽  
Solar Spectrum ◽  
Single Crystal Silicon ◽  
Silicon Single Crystal ◽  
Point Of View ◽  
Band Tail ◽  
Infrared Band ◽  
Crystal Silicon ◽  
Silicon Devices ◽  
Conversion Point

AbstractA multi-interface solar cell design exploiting the parts of solar spectrum heretofore never converted by single-crystal silicon devices seems to be possible with local material modifications combined with a superimposition of hetero-interface transition zones. Possible structural modifications by implantation of a silicon single-crystal target causes a series of “secondary” effects of basic importance from the photovoltaic conversion point of view. The 1800 nm divacancy infrared band activity has revealed totally unknown behavior in the built-in strain field of the inserted α-Si/c-Si hetero-interface. First, even an annealing temperature of 770 K is not enough to quench the divacancy absorption. Next, the elimination of useful band-tail and useless divacancy activities is not coincident, i.e. divacancy absorption can be quenched without too much reduction of the band-tail activity. A relatively important infrared current could be observed experimentally up to 2500 nm and by extrapolation up to about 3500 nm.

Selective Silicon Epitaxy for Advanced Dram Structures

1989 ◽  
Vol 158 ◽  
Author(s):  
Gary B. Bronner
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Advanced Technology ◽  
Memory Cells ◽  
Crystal Silicon ◽  
Silicon Epitaxy ◽  
Silicon Devices ◽  
The Future ◽  
A Cell

ABSTRACTIn silicon microelectronics, memory cells and chips are used to develop the most advanced technology. In the future these chips will require three dimensional structures to achieve the needed density. This paper describes the use of selective silicon epitaxy to build truly three dimensional DRAM cells. The cell consists of a trench capacitor which is overgrown with single crystal silicon. A transistor and isolation are then built above the trench capacitor resulting in a cell that occupies the same area as the transistor alone. Fully functional memory cells have been built. The results show that selective silicon epitaxy is a realistic candidate for building three dimensional silicon devices.

scholarly journals Precision control of thermal transport in cryogenic single-crystal silicon devices

2014 ◽  
Vol 115 (12) ◽  
pp. 124508 ◽  
Author(s):  
K. Rostem ◽  
D. T. Chuss ◽  
F. A. Colazo ◽  
E. J. Crowe ◽  
K. L. Denis ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Transport ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Precision Control ◽  
Silicon Devices

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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