scholarly journals Observed single atom elastic cross sections in a scanning electron microscope

1974 ◽  
Author(s):  
M. Retsky
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Single Atom ◽  
Scanning Electron

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

A study of the interaction of silver with amorphous chalcogenide films in the Scanning Electron Microscope

1990 ◽  
Vol 48 (4) ◽  
pp. 694-695
Author(s):  
A.G. Fitzgerald ◽  
S.M. Potrous
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
X Ray ◽  
Chalcogenide Films ◽  
Transmission Electron ◽  
Amorphous Chalcogenides ◽  
Scanning Electron

The diffusion of silver in amorphous chalcogenides is the basis for high-resolution lithographic applications. Previous studies of the diffusion of silver on contact with chalcogenide films has been studied by Auger depth profiling and the effects of photodoping on chemical bonding have been studied by x-ray photoelectron spectroscopy. Electron lithographic effects have been studied in the transmission electron microscope.The objective of the investigation described here has been to determine the degree of diffusion of silver in the amorphous chalcogenides, As2S3, As2Se3, GeS and GeSe when these films are in contact with thin silver films. The silver distribution has been determined by x-ray microanalysis of film cross-sections in the scanning electron microscope (SEM). Electron beam induced conductivity (EBIC) at points in these films has also been investigated.

“Casino V2.0 : An Advance Simulation Tool for Scanning Electron Microscope Users”

2001 ◽  
Vol 7 (S2) ◽  
pp. 684-685
Author(s):  
D. Drouin ◽  
A.R. Couture ◽  
R. Gauvin
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Thin Foil ◽  
Single Scattering ◽  
X Rays ◽  
Backscattered Electron ◽  
Version 2.0 ◽  
The Moment ◽  
Scanning Electron

The topic of this paper is to present a new Windows™ environment version of the CASINO Monte Carlo program. The goal of this program is to assist scanning electron microscope users in their routine analysis and also in more advanced topic such as electron beam lithography for example. Based on a single scattering algorithm, this software is specially designed for low beam interaction in a bulk and thin foil. This program uses tabulated Mott elastic cross-sections, which benefit of both fast calculation and accurate interaction at low beam energy. At the moment CASINO can either be used to generate X-rays or backscattered electron signals. The program used simple two-dimension geometry to represent real sample. in this version, vertical and horizontal planes can be generated to allow cross-section representation or multi-layers analysis. Then beam can be scanned across different regions to produce X-ray linescan or bascattered electron profiles.Many new convenient features have been added to the version 2.0 of CASINO. The new interface lets the users to consult the results as the simulation is still in progress.

X-Ray Emission of Porous Materials In The Scanning Electron Microscope Computed Using Monte Carlo Simulations

1997 ◽  
Vol 3 (S2) ◽  
pp. 883-884 ◽  
Author(s):  
Raynald Gauvin
Keyword(s):  
Monte Carlo ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Monte Carlo Simulations ◽  
Porous Materials ◽  
Cross Sections ◽  
Quantitative Methods ◽  
Electron Trajectories ◽  
X Ray ◽  
Scanning Electron

Conventional quantitative X-ray microanalysis in the scanning electron microscope or in the electron microprobe is valid for specimens of bulk homogeneous composition and with flat and polished surfaces. Quantitative methods, using X-ray microanalysis and Monte Carlo simulations of electron trajectories in solids, have been developed for the chemical analysis of spherical inclusions embedded in a matrix and for multilayered specimens. In this paper, the effect of porosity and of the size of the pores are investigated concerning their effect on X-ray emission using Monte Carlo simulation of electron trajectories in solids since porous materials are of great technological importance.This new Monte Carlo program uses elastic Mott cross-sections to compute electron trajectories and the Joy & Luo modification of the continuous Bethe law of energy loss and the details are given elsewhere. This program assumes that all the pores are spherical and have the same size.

Factors Affecting on the Bond Strength of Dental Zirconia to Veneering Porcelains

2012 ◽  
Vol 529-530 ◽  
pp. 507-511 ◽  
Author(s):  
Jiro Tsuruki ◽  
Hiroshi Kono ◽  
Yuji Okuda ◽  
Makoto Noda ◽  
Hiroyuki Arikawa ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Testing Machine ◽  
Acrylic Resin ◽  
Factors Affecting ◽  
Specimen Holder ◽  
Universal Testing ◽  
Bond Strengths ◽  
Scanning Electron

The bond strengths between two kinds of zirconia and three kinds of feldspathic veneering porcelains were measured. The specimens were prepared at four firing temperatures for three holding periods, respective opaque porcelain was painted and vacuum-fired. Then, each dentin porcelain was condensed in an acrylic resin mold and vacuum-fired under the conditions mentioned above. Cross sections of the interface between zirconia and porcelain were observed with a scanning electron microscope. The specimens were fixed to specimen holder on a universal testing machine. Data of the bonding test were statistically analyzed. The results showed that all the four factors statistically affected the bonding strength (p<0.01). The contribution of the firing temperature was highest and that of the porcelain type was lowest (p<0.01).

scholarly journals A Low-voltage Scanning Electron Microscope with a Single-atom Electron Source

Hyomen Kagaku ◽  
2008 ◽  
Vol 29 (11) ◽  
pp. 665-671 ◽  
Author(s):  
Tsuyoshi ISHIKAWA ◽  
Akira YONEZAWA ◽  
Hidekazu SAITO ◽  
Makoto KANDA ◽  
Chuhei OSHIMA
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Low Voltage ◽  
Electron Source ◽  
Single Atom ◽  
Voltage Scanning ◽  
Scanning Electron

scholarly journals Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Nicole Wollschläger ◽  
Zuhal Tasdemir ◽  
Ines Häusler ◽  
Yusuf Leblebici ◽  
Werner Österle ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Force Sensor ◽  
Native Oxide ◽  
Elastic Behavior ◽  
Show Evidence ◽  
Scanning Electron

Three-point bending tests were performed on double-anchored,110silicon nanowire samples in the vacuum chamber of a scanning electron microscope (SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10 μm tall supports through a top-down fabrication approach involving a series of etching processes. The exact dimension of wire cross sections was determined by transmission electron microscopy (TEM). Conducting the experiments in an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which could then be taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for110silicon. Hence, test results neither show any size effect nor show evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. The results demonstrate the potential of the developed nanowire fabrication approach for the incorporation in functional micromechanical devices.

Looking Inside—Having a Cracking Time

2010 ◽  
Vol 18 (3) ◽  
pp. 54-57
Author(s):  
Steve Chapman
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Cross Sections ◽  
Light Microscope ◽  
Short Article ◽  
Preparation Methods ◽  
Sample Preparation Methods ◽  
Scanning Electron

If you wish to look inside an arbitrary piece of material and you own a light microscope (LM) or scanning electron microscope (SEM), there are probably three ways that you may accomplish your aim: (a) embed the material in epoxy, then grind and polish it flat; (b) embed the material and use a microtome to obtain cross sections; or (c) CRACK IT. In this short article, it is the last option that will be discussed. The last method is the simplest and quickest of the textbook sample preparation methods for SEM .

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