scholarly journals Nanoscale Mapping of Bromide Segregation on the Cross Sections of Complex Hybrid Perovskite Photovoltaic Films Using Secondary Electron Hyperspectral Imaging in a Scanning Electron Microscope

ACS Omega ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 2126-2133 ◽  
Author(s):  
Vikas Kumar ◽  
Whitney L. Schmidt ◽  
Giorgio Schileo ◽  
Robert C. Masters ◽  
Michael Wong-Stringer ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Hyperspectral Imaging ◽  
Cross Sections ◽  
Secondary Electron ◽  
Hybrid Perovskite ◽  
Complex Hybrid ◽  
Photovoltaic Films ◽  
Scanning Electron ◽  
Perovskite Photovoltaic

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

scholarly journals Coloring Pictures for Electron Microscopists or Elements of Digital Image Manipulation for Students

2008 ◽  
Vol 16 (4) ◽  
pp. 62-63
Author(s):  
V.M. Dusevich ◽  
J.H. Purk ◽  
J.D. Eick
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Digital Image ◽  
Secondary Electron ◽  
Image Manipulation ◽  
Sem Micrographs ◽  
Backscattered Electrons ◽  
Digital Picture ◽  
Scanning Electron

Coloring pictures is an educational exercise, which is fun, and helps develop important skills. Coloring SEM micrographs is especially suitable for electron microscopists. Color micrographs are not just great looking on a lab wall; they inspire both microscopists and students to exercise digital picture manipulation. Many microscopists enjoyed looking at the beautiful color micrographs by D. Scharf, but were frustrated to learn they needed a very particular scanning electron microscope equipped with multiple secondary electron detectors in order to color their own pictures. Fortunately, there are other ways to color SEM micrographs. Most SEMs are equipped with at least two detectors, for secondary and backscattered electrons.

Novel and Advanced Applications of the Low Vacuum and Environmental Scanning Electron Microscope (SEM)

1997 ◽  
Vol 3 (S2) ◽  
pp. 385-386 ◽  
Author(s):  
Brendan J. Griffin
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Electron Gun ◽  
Environmental Scanning ◽  
Electron Detector ◽  
Environmental Sem ◽  
Practical Sense ◽  
Advanced Applications ◽  
Scanning Electron

The environmental SEM is an extremely adaptive instrument, allowing a range of materials to be examined under a wide variety of conditions. The limitations of the instrument lie mainly with the restrictions imposed by the need to maintain a moderate vacuum around the electron gun. The primary effect of this has been, in a practical sense, the limited low magnification available. Recently this has been overcome by modifications to the final pressure limiting aperture and secondary electron detector (Fig.l). The modifications are simple and users should be brave in this regard.A variety of electron detectors now exist including various secondary, backscattered and cathodoluminescence systems (Figs 2-5). These provide an excellent range of options; the ESEM must be regarded as a conventional SEM in that a range of imaging options should be installed. In some cases, e.g. cathodoluminescence, the lack of coating provides an advantage unique to the low vacuum SEMs.

Research and Application of S-4800 Scanning Electron Microscope in Modern Testing and Analysis Technology

2014 ◽  
Vol 668-669 ◽  
pp. 936-939
Author(s):  
Quan Wen ◽  
Zhao Yang Ding ◽  
Fu Sheng Kou ◽  
Peng Zhou
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Forming Mechanism ◽  
Main Application ◽  
Signal Transformation ◽  
Backscattered Electron ◽  
Application Fields ◽  
Scanning Electron

Mechanism and functions of S-4800 Scanning Electron Microscope are introduced in this paper. The image-forming mechanism and structure of SEM are studied, and the signal transformation of secondary electron and backscattered electron is presented. The main application fields of SEM are researched.

Field Emission SEM with a Newly Developed FEGUN and Conical Strongly Excited Objective Lens

2000 ◽  
Vol 6 (S2) ◽  
pp. 764-765
Author(s):  
H. Kazumori ◽  
A. Yamada ◽  
M. Mita ◽  
T. Nokuo ◽  
M. Saito
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Objective Lens ◽  
Probe Current ◽  
Large Samples ◽  
Low Emission ◽  
Working Distance ◽  
Scanning Electron

A newly developed cold FE-GUN which enables to us to obtain large probe current and low emission noise, and conical strongly excited objective lens has been installed on the JSM-6700F Scanning Electron Microscope (SEM). In the range of accelerating voltages from 0.5 to 15kV, this instrument has got much better resolution as compared with in-lens type SEM (Ohyama et al 1986)(Fig. 1). We can obtain high-resolution secondary electron images with large samples (ex. 150mm ϕ×10mmH).Our old type objective lens (Kazumori et al 1994) has the limitation of working distance (WD), but the new lens enables us to work at very short WD at accelerating voltage of 15kV. As a result the spherical (Cs) and chromatic (Cc) aberration constants are 1.9mm and 1.7mm respectively at a WD of 3mm.In order to get large probe current, we increased emission current and got near the distance between the t ip of emi tter and the pr inciple plane of condenser lens.

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