Final report of Sandia National Laboratories (SNL) contribution to IAEA CRP F11016 on ?Utilization of ion accelerators for study-ing and modeling of radiation induced defects in semiconductors and insulators?.
2015 ◽
Vol 9
(2)
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pp. 231-236
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Keyword(s):
1990 ◽
Vol 48
(4)
◽
pp. 92-93
1986 ◽
Vol 47
(C8)
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pp. C8-1045-C8-1048
1994 ◽
Vol 33
(Part 2, No. 2B)
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pp. L233-L234
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2008 ◽
Vol 266
(12-13)
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pp. 2834-2841
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