scholarly journals Fabrication of Efficient, Large Aperture Transmission Diffraction Gratings by Ion-Beam Etching

2000 ◽  
Author(s):  
H T Nguyen ◽  
S R Bryan ◽  
J A Britten ◽  
M D Perry
2012 ◽  
Vol 20 (8) ◽  
pp. 1676-1683
Author(s):  
邱克强 QIU Ke-qiang ◽  
周小为 ZHOU Xiao-wei ◽  
刘颖 LIU Ying ◽  
徐向东 XU Xiang-dong ◽  
刘正坤 LIU Zheng-kun ◽  
...  

2007 ◽  
Author(s):  
Ying Liu ◽  
Xiangdong Xu ◽  
Yilin Hong ◽  
Dequan Xu ◽  
Shaojun Fu

Author(s):  
M. Spector ◽  
A. C. Brown

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.


1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).


Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.


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