Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics: Final Report, 17 July 1998--16 November 2001

Layered Ruddlesden–Popper perovskite (RPP) photovoltaics have gained substantial attention owing to their excellent air stability. However, their photovoltaic performance is still limited by the unclear real-time charge-carrier mechanism of operating...

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Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300462 ◽

2020 ◽

Author(s):

Guillaume Courtois ◽

Rufi Kurstjens ◽

Jinyoun Cho ◽

Kristof Dessein ◽

Ivan Garcia ◽

...

Keyword(s):

Solar Cells ◽

Multijunction Solar Cells ◽

Engineered Substrates

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Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽

10.3390/coatings11040398 ◽

2021 ◽

Vol 11 (4) ◽

pp. 398

Author(s):

Pablo Caño ◽

Carmen M. Ruiz ◽

Amalia Navarro ◽

Beatriz Galiana ◽

Iván García ◽

...

Keyword(s):

Solar Cells ◽

Gallium Phosphide ◽

Growth Process ◽

Electrical Characterization ◽

Substrate Preparation ◽

Nucleation Layer ◽

Si Substrates ◽

Ideal Candidate ◽

Multijunction Solar Cells ◽

Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

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III‐V//Si multijunction solar cells with 30% efficiency using smart stack technology with Pd nanoparticle array

Progress in Photovoltaics Research and Applications ◽

10.1002/pip.3200 ◽

2019 ◽

Vol 28 (1) ◽

pp. 16-24 ◽

Cited By ~ 6

Author(s):

Kikuo Makita ◽

Hidenori Mizuno ◽

Takeshi Tayagaki ◽

Taketo Aihara ◽

Ryuji Oshima ◽

...

Keyword(s):

Solar Cells ◽

Nanoparticle Array ◽

Pd Nanoparticle ◽

Multijunction Solar Cells

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