scholarly journals Stable a-Si:H Based Multijunction Solar Cells with Guidance from Real Time Optics: Annual Report, Phase I: 17 July 1998-16 October 1999

2000 ◽  
Author(s):  
C R Wronski ◽  
R W Collins ◽  
L Jiao ◽  
A Ferlauto ◽  
P I Rovira ◽  
...  
2002 ◽  
Author(s):  
C. R. Wronski ◽  
R. W. Collins ◽  
J. M. Pearce ◽  
R. J. Koval ◽  
A. S. Ferlauto ◽  
...  

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato

Author(s):  
Jun Xi ◽  
Junseop Byeon ◽  
Unsoo Kim ◽  
Kijoon Bang ◽  
Gi Rim Han ◽  
...  

Layered Ruddlesden–Popper perovskite (RPP) photovoltaics have gained substantial attention owing to their excellent air stability. However, their photovoltaic performance is still limited by the unclear real-time charge-carrier mechanism of operating...


Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.


2019 ◽  
Vol 28 (1) ◽  
pp. 16-24 ◽  
Author(s):  
Kikuo Makita ◽  
Hidenori Mizuno ◽  
Takeshi Tayagaki ◽  
Taketo Aihara ◽  
Ryuji Oshima ◽  
...  

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