Response of $D^0$ U-LAr Calorimeters at Low-Energies and the Effect of Oxygen Contamination on Observed Signals

1994 ◽  
Author(s):  
Robert James Hirosky
Keyword(s):  
Oxygen Contamination ◽  
Low Energies ◽  
Effect Of Oxygen

Effect of Oxygen Contamination on Inhibition Studies in Carbon Dioxide Corrosion

CORROSION ◽  
2005 ◽  
Vol 61 (11) ◽  
pp. 1086-1097 ◽  
Author(s):  
E. Gulbrandsen ◽  
J. Kvarekvål ◽  
H. Miland
Keyword(s):  
Carbon Dioxide ◽  
Carbon Dioxide Corrosion ◽  
Oxygen Contamination ◽  
Effect Of Oxygen ◽  
Inhibition Studies

scholarly journals Effect of oxygen contamination on densification of Fe(Se,Te)

2020 ◽  
Vol 1559 ◽  
pp. 012051
Author(s):  
A. Masi ◽  
C. Alvani ◽  
A. Angrisani Armenio ◽  
M. Bellusci ◽  
G. Celentano ◽  
...  
Keyword(s):  
Oxygen Contamination ◽  
Effect Of Oxygen

The Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys

2006 ◽  
Vol 910 ◽  
Author(s):  
Shouvik Datta ◽  
J. David Cohen ◽  
Steve L. Golledge ◽  
Yueqin Xu ◽  
A. H. Mahan ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Germanium ◽  
Film Growth ◽  
Impurity Level ◽  
Oxygen Impurity ◽  
Hot Wire ◽  
Si Substrates ◽  
Oxygen Contamination ◽  
Effect Of Oxygen ◽  
High Level

AbstractA series of four a Si,Ge:H alloy samples with Ge fractions near 30 at.% were deposited by hot-wire CVD (HWCVD) using a Ta filament maintained at 1800oC. During film growth, the level of oxygen contamination was varied from less than 1019 cm−3 to roughly 5 × 1020 cm−3 using a controlled air-leak. The electronic properties of these films were then characterized using transient photocapacitance (TPC) and transient photocurrent (TPI) spectroscopy, as well as the drive-level capacitance profiling (DLCP) techniques. We observed an unexpected systematic improvement of the electronic properties of these HWCVD a Si,Ge:H with increasing oxygen impurity level, which was reflected by a decrease in the deduced Urbach energies. Comparing these with films co-deposited on stainless-steel versus p+ c-Si substrates, we found significantly better electronic properties in the latter case. Comparisons of the TPC and TPI spectra indicated a very high level of hole collection, consistent with these narrow bandtail distributions.

THE EFFECT OF OXYGEN ON THE FORMATION OF MANGANESE SILICIDE

2002 ◽  
Vol 16 (28n29) ◽  
pp. 1135-1142 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. J. HE
Keyword(s):  
Thermal Annealing ◽  
Oxygen Concentration ◽  
Depth Profiling ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Reactive Deposition ◽  
Oxygen Contamination ◽  
Manganese Silicide ◽  
Effect Of Oxygen ◽  
Oxygen Impurities

The behavior of oxygen impurities during thermal annealing of manganese-silicon diffusion couples and reactive deposition of MnSi 1.7 films has been studied. Samples were prepared by reactive deposition or thermal evaporation of manganese on silicon (100) substrates, which were then annealed in vacuum. The investigation techniques included depth profiling using Auger electron spectroscopy and electrical resistance measurements. The oxygen contamination originated from the preparation chamber or exposing the sample to air before thermal annealing. The oxygen diffused into the manganese film and blocked the silicide formation. For reactive deposition of the MnSi 1.7 films, the competition between silicide formation and oxygen diffusion resulted in the formation of silicide films with oxygen concentration of about 5 at% or the diffusion of oxygen in the manganese film with oxygen concentration of about 35 at%. The presence of a higher concentration of oxygen in the manganese layer prevented any silicide formation.

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