Effect of oxygen contamination on the mobility and external parameters of C60 based thin-film transistors

2005 ◽  
Author(s):  
A. Tapponnier ◽  
R. U. A. Khan ◽  
P. Günter
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Contamination ◽  
Effect Of Oxygen

Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

2013 ◽  
Vol 1 (40) ◽  
pp. 6613 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Yu-Cheng Chang ◽  
Hsin-Chiang You ◽  
Ranjodh Singh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Plasma ◽  
Surface States ◽  
Zno Films ◽  
Effect Of Oxygen

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 590 ◽  
pp. 229-233
Author(s):  
Sheng Po Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Subthreshold Slope ◽  
Partial Pressures ◽  
Zinc Tin Oxide ◽  
Effect Of Oxygen

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin–oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4 %, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec−1were obtained.

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

2016 ◽  
Vol 122 (10) ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Wen-Qing Zhu ◽  
Jian-Hua Zhang ◽  
Xue-Yin Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Effect Of Oxygen ◽  
Amorphous Ingazno

scholarly journals Effect of oxygen on stability performance of the IZO junctionless thin film transistors

2013 ◽  
Vol 62 (13) ◽  
pp. 137201
Author(s):  
Zhang Geng-Ming ◽  
Guo Li-Qiang ◽  
Zhao Kong-Sheng ◽  
Yan Zhong-Hui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stability Performance ◽  
Effect Of Oxygen

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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