Effect of oxygen contamination on the deposition of hydrogenated amorphous silicon films by tetrode radio frequency sputtering

1987 ◽  
Vol 5 (4) ◽  
pp. 1786-1790 ◽  
Author(s):  
Yasuo Gekka ◽  
Tadashi Fukuda ◽  
Yoh‐ichi Yasumura ◽  
Hiroshi Kezuka ◽  
Makio Akimoto
Keyword(s):  
Radio Frequency ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radio Frequency Sputtering ◽  
Oxygen Contamination ◽  
Effect Of Oxygen ◽  
Hydrogenated Amorphous

Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films

1991 ◽  
Vol 59 (17) ◽  
pp. 2130-2132 ◽  
Author(s):  
Akiharu Morimoto ◽  
Minoru Matsumoto ◽  
Masahiro Yoshita ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Doping Effect ◽  
Nitrogen Impurity ◽  
Effect Of Oxygen ◽  
Hydrogenated Amorphous

Photoconductivity and trapping parameters in hydrogenated amorphous silicon films

1983 ◽  
Vol 9 (1-3) ◽  
pp. 295-300
Author(s):  
S. Galassini ◽  
G. Micocci ◽  
C. Pennetta ◽  
A. Rizzo ◽  
A. Tepore ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous
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