scholarly journals LDRD Report: Topological Design Optimization of Convolutes in Next Generation Pulsed Power Devices.

2017 ◽  
Author(s):  
Eric C. Cyr ◽  
Gregory John von Winckel ◽  
Drew Philip Kouri ◽  
Thomas Anthony Gardiner ◽  
Denis Ridzal ◽  
...  
Keyword(s):  
Design Optimization ◽  
Pulsed Power ◽  
Next Generation ◽  
Power Devices ◽  
Topological Design

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

scholarly journals Fundamental studies on initiation and evolution of multi-channel discharges and their application to next generation pulsed power machines.

2014 ◽  
Author(s):  
Jens Schwarz ◽  
Mark E. Savage ◽  
Diego Jose Lucero ◽  
Deanna M. Jaramillo ◽  
Kelly Gene Seals ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Next Generation

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

SiC High Temperature Electronics for Next Generation Aircraft Controls Systems

1996 ◽  
Author(s):  
John F. Perkins ◽  
Richard H. Hopkins ◽  
Charles D. Brandt ◽  
Anant K. Agarwal ◽  
Suresh Seshadri ◽  
...  
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Technology Development ◽  
Temperature Tolerance ◽  
Oxide Semiconductor ◽  
Power Device ◽  
Next Generation ◽  
Power Devices ◽  
Basic Work ◽  
Aircraft Controls

Several organizations, including Westinghouse, CREE, and ATM, as well as researchers in Japan and Europe, are working to develop SiC power devices for reliable, high power and high temperature environments in military, industrial, utility, and automotive applications. Other organizations, such as NASA Lewis and several universities, are also doing important basic work on basic SiC technology development. It has been recognized for two decades that the superior properties of SiC lead to range of devices with higher power, greater temperature tolerance, and significantly more radiation hardness than silicon or GaAs. This combination of superior thermal and electrical properties results in SiC devices that can operate at up to ten times the power density of Si devices for a given volume. Recent research has focused on the development of vertical metal oxide semiconductor field effect transistor (VMOSFET) power device technology, and complementary high speed, temperature-tolerant rectifier-diodes for power applications. We are also evaluating applications for field control thyristors (FCT) and MOS turn-off thyristors (MTO). The technical issues to be resolved for these devices are also common to other power device structures. The present paper reviews the relative benefits of various power devices structures, with emphasis on how the special properties of SiC enhance the desirability of specific device configurations as compared to the Si-based versions of these devices. Progress in SiC material quality and recent power device research will be reviewed, and the potential for SiC-based devices to operate at much higher temperatures than Si-based devices, or with enhanced reliability at higher temperatures will be stressed. We have already demonstrated 1000V breakdown, current densities of 1 kA/cm2, and measurements up to 400°C in small diodes. The extension of this work will enable the implementation of highly distributed aircraft power control systems, as well as actuator and signal conditioning electronics for next generation engine sensors, by permitting electronic circuits, sensors and smart actuators to be mounted on or at the engine.

Sign in / Sign up

Export Citation Format

Share Document