Expectations of next-generation power devices for home and consumer appliances

2014 ◽  
Author(s):  
Akihiko Kanouda ◽  
Hiroyuki Shoji ◽  
Takae Shimada ◽  
Toshikazu Okubo
Keyword(s):  
Next Generation ◽  
Power Devices ◽  
Generation Power

Study on Loss Calculation for Inverter Based on 1200V SiC MOSFET

2014 ◽  
Vol 672-674 ◽  
pp. 906-913
Author(s):  
Li Jun Xie ◽  
Jin Yuan Li ◽  
Kun Shan Yu
Keyword(s):  
Power Dissipation ◽  
Power Loss ◽  
Next Generation ◽  
Power Losses ◽  
Analysis Model ◽  
Power Devices ◽  
Loss Calculation ◽  
Converter Design ◽  
The Cost ◽  
Generation Power

SiC MOSFETs are expected as one of next generation power devices for their superior performances compared with conventional Si power devices and have become one of the new promising substitude to Si devices. The characteristics of 1200V SiC MOSFET are presented first and the power losses analysis model of SiC devices are given. As losses of power devices are essential parameters in converter design, the power dissipation of SiC MOSFET in SPWM inverter are calculated. In this paper, whether a free-wheeling-diode necessary is illustrated from the point of power dissipation and choice is made based on the power loss. According to the analysis result, the inverter without SBD shows less power losses, which can reduce the cost and volume of inverter.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

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