scholarly journals Small-angle x-ray scattering studies of microvoids in amorphous-silicon-based semiconductors. Annual subcontract report, February 1, 1992--January 31, 1993

1994 ◽  
Author(s):  
D L Williamson ◽  
S J Jones ◽  
Y Chen
Keyword(s):  
Amorphous Silicon ◽  
Small Angle ◽  
X Ray ◽  
X Ray Scattering ◽  
Silicon Based ◽  
Ray Scattering

scholarly journals Small-angle x-ray scattering in amorphous silicon: A computational study

2018 ◽  
Vol 97 (18) ◽  
Author(s):  
Durga Paudel ◽  
Raymond Atta-Fynn ◽  
David A. Drabold ◽  
Stephen R. Elliott ◽  
Parthapratim Biswas
Keyword(s):  
Amorphous Silicon ◽  
Small Angle ◽  
Computational Study ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Small-Angle X-Ray Scattering from a-Si:H and a-SiC:H Alloys Prepared by Reactive DC Magnetron Sputtering

1992 ◽  
Vol 258 ◽  
Author(s):  
Yan Chen ◽  
S.J. Jones ◽  
D.L. Williamson ◽  
S. Yang ◽  
N. Maley ◽  
...  
Keyword(s):  
Small Angle ◽  
Reactive Magnetron ◽  
Dc Magnetron Sputtering ◽  
Density Measurements ◽  
X Ray ◽  
X Ray Scattering ◽  
Significant Difference ◽  
Magnetron Sputter ◽  
Silicon Based ◽  
Ray Scattering

ABSTRACTThe microstructure of amorphous silicon-based alloys prepared by reactive magnetron sputter (RMS) deposition has been examined on a scale from 1 to 25 nm using small-angle x-ray scattering (SAXS) and compared to that from films prepared by standard glow-discharge (GD) technology. Device-quality RMS a-Si:H material is found to have a larger microvoid fraction than device-quality GD a-Si:H and to have a significantly different size distribution. Addition of by the RMS technique using CH produces enhanced SAXS similar to the introduction of C via CH4 in GD material. A significant difference in the SAXS from RMS a-Si:H and a-SiC:H films compared to GD films is the observation of some oriented microstructure, most likely columnar in nature. Flotation density measurements of the same films examined by SAXS support the assumption that the SAXS originates primarily from microvoids.

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