scholarly journals The Dual-Gate Lumen Model of Renal Monoamine Transport [Retraction]

2020 ◽  
Vol Volume 16 ◽  
pp. 3133-3134
Author(s):  
Marty Hinz ◽  
Alvin Stein ◽  
Thomas Uncini
Keyword(s):  
Monoamine Transport ◽  
Dual Gate

scholarly journals The dual-gate lumen model of renal monoamine transport

2010 ◽  
pp. 387
Author(s):  
Marty Hinz ◽  
Thomas Uncini ◽  
Alvin Stein
Keyword(s):  
Monoamine Transport ◽  
Dual Gate

scholarly journals The Dual-Gate Lumen Model of Renal Monoamine Transport [Expression of Concern]

2020 ◽  
Vol Volume 16 ◽  
pp. 1085-1086
Author(s):  
Marty Hinz ◽  
Alvin Stein ◽  
Thomas Uncini
Keyword(s):  
Monoamine Transport ◽  
Dual Gate

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

Vesicular Monoamine Transport Inhibitors

Hypertension ◽  
1996 ◽  
Vol 28 (3) ◽  
pp. 414-420 ◽  
Author(s):  
Manjula Mahata ◽  
Sushil K. Mahata ◽  
Robert J. Parmer ◽  
Daniel T. O'Connor
Keyword(s):  
Monoamine Transport ◽  
Transport Inhibitors

Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor

Robust n/sup +//p/sup +/ dual-gate cmos device fabrication using dopant drive-out technique

2005 ◽  
Author(s):  
D.C.H. Yu ◽  
K.H. Lee ◽  
A. Kornblit ◽  
C.C. Fu ◽  
R.H. Yan ◽  
...  
Keyword(s):  
Device Fabrication ◽  
Dual Gate

Flexible Dual-Gate MoS₂ Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes

2021 ◽  
pp. 1-5
Author(s):  
Chunsheng Chen ◽  
Yongli He ◽  
Li Zhu ◽  
Ying Zhu ◽  
Yi Shi ◽  
...  
Keyword(s):  
Proton Conducting ◽  
Dual Gate ◽  
Chitosan Membranes
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