Surface damage effects on secondary electron emission From the negative electron affinity diamond surface

1995 ◽  
Vol 416 ◽  
Author(s):  
D. P. Malta ◽  
J. B. Posthill ◽  
T. P. Humphreys ◽  
M. J. Mantini ◽  
R. J. Markunas
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Photoelectron Spectroscopy ◽  
Secondary Electron ◽  
Natural Diamond ◽  
Hydrogen Plasma ◽  
Secondary Electron Emission ◽  
Surface Damage ◽  
Diamond Surface ◽  
Negative Electron Affinity

ABSTRACTThe effects of surface damage on the secondary electron emission characteristics of a natural diamond (100) surface have been investigated using ultraviolet photoelectron spectroscopy and scanning electron microscopy. Surface damage was intentionally induced by abrading the (100) diamond face with diamond paste. Removal of the damage was achieved by a sequence of ion implantation, graphitization, electrochemical etching and oxygen/argon plasma etching. Prior to characterization performed between steps in the sequence, the surface was hydrogenated by exposure to a hydrogen plasma in attempts to create a negative electron affinity surface condition. Upon removal of the surface damage, the secondary electron yield from the negative electron affinity surface was enhanced by a factor of ˜20 over that from the damaged negative electron affinity surface.

Characterization of Secondary Electron Emission from Materials with Low or Negative Electron Affinity

1998 ◽  
Vol 509 ◽  
Author(s):  
J.E. Yater ◽  
A. Shih
Keyword(s):  
Energy Distribution ◽  
Surface Properties ◽  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Surface Composition ◽  
Secondary Electron Emission ◽  
Emission Characteristics ◽  
Negative Electron Affinity ◽  
Diamond Surfaces

AbstractSecondary electron emission spectroscopy is used to examine the emission characteristics of diamond films as a function of the bulk and surface properties. We find significant variation in the secondary electron yields measured from diamond surfaces even when energy distribution measurements indicate that a low or negative electron affinity is present. In particular, we observe that the material properties, such as bulk and surface uniformity, surface composition, and impurity and defect concentrations, have a strong affect on the secondary electron yield measurements. Furthermore, the energy distribution of the emitted electrons is found to vary with adsorbate species. In certain cases, the energy distribution changes with adsorbate coverage even though the measured electron intensity remains unchanged. From an analysis of the data, we identify bulk and surface properties needed to optimize the emission characteristics.

Secondary Electron Emission Spectroscopy of Crystalline and Non-Crystalline Carbon Allotropes

1990 ◽  
Vol 201 ◽  
Author(s):  
Alon Hoffman ◽  
Steven Prawer
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Ion Irradiation ◽  
Quartz Substrate ◽  
Natural Diamond ◽  
Pyrolytic Graphite ◽  
Secondary Electron Emission ◽  
Diamond Surface ◽  
Diamond Surfaces ◽  
Diamond Thin Film

AbstractThe Secondary Electron Emission (SEE) spectra of type Ha diamond, highly oriented pyrolytic graphite (HOPG), amorphous carbon (e-beam evaporated), glassy carbon and amorphic-diamond (filtered arc evaporated) were measured in the 0–80 eV electron kinetic energy range, and found to be very distinctive for the different carbon allotropcs. The sensitivity of SEE spectroscopy to crystal damage for the type Ha diamond surface was studied by performing SEE measurements as function of 1 keV argon ion irradiation dose. Two examples of the use of SEE in the characterization of diamond surfaces are presented. In the first, the crystalline quality of the back and front surfaces of a chemically vapour deposited diamond thin film which had dclaminated from a fused quartz substrate were compared using SEE and, in the second, SEE was used to provide a qualitative estimate of the damage induced by mechanical polishing of a natural diamond surface.

THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850181 ◽  
Author(s):  
AI-GEN XIE ◽  
YANG YU ◽  
YA-YI CHEN ◽  
YU-QING XIA ◽  
HAO-YU LIU
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Theoretical Research ◽  
Negative Electron Affinity ◽  
Secondary Electron Yield ◽  
Electron Yield ◽  
Yield Formula

Based on primary range [Formula: see text], relationships among parameters of secondary electron yield [Formula: see text] and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors were deduced, respectively; where [Formula: see text] is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with [Formula: see text], [Formula: see text], deduced universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors and experimental data, special formulas for [Formula: see text] at 0.5[Formula: see text] of several NEA semiconductors with [Formula: see text] were deduced and proved to be true experimentally, respectively; where [Formula: see text] is the [Formula: see text] at which [Formula: see text] reaches maximum secondary electron yield. It can be concluded that the formula for [Formula: see text] of NEA semiconductors with [Formula: see text] was deduced and could be used to calculate [Formula: see text], and that the method of calculating the 1/[Formula: see text] of NEA semiconductors with [Formula: see text] is plausible; where [Formula: see text] is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/[Formula: see text] is mean escape depth of secondary electron.

Interpretation of secondary electron contrast from negative electron affinity diamond surfaces

1995 ◽  
Vol 53 ◽  
pp. 120-121
Author(s):  
D.P. Malta ◽  
J.B. Posthill ◽  
T.P. Humphreys ◽  
R.J. Markunas
Keyword(s):  
Conduction Band ◽  
Electron Affinity ◽  
Secondary Electron ◽  
Metal Layer ◽  
Wide Band ◽  
Diamond Surface ◽  
Semiconductor Surface ◽  
Negative Electron Affinity ◽  
Diamond Surfaces ◽  
Electron Emitters

Diamond is a wide band-gap semiconductor with many unique physical properties that make it an attractive technological material. One such property is the negative electron affinity (NEA) behavior of the surface when properly terminated with hydrogen or a thin metal layer. The NEA diamond surface exhibits an unusually large secondary electron (SE) yield which is desirable for applications in cold cathode electron emitters of flat panel displays. Examination of NEA diamond surfaces by scanning electron microscopy (SEM) has indicated that a unique mechanism appears to be responsible for the SE contrast in which sub-surface microstructural information is contained. This paper provides a brief interpretation of the origin of SE contrast from the NEA diamond surface.The electron affinity of a semiconductor surface, χ, is defined by the position of the vacuum energy level, E0, relative to the conduction band minimum, Ec (Fig. la). If χ>0, excited conduction band electrons must migrate to the surface and arrive with sufficient kinetic energy to overcome the surface energy barrier in order to escape into vacuum.

Sign in / Sign up

Export Citation Format

Share Document