Effect of Thermal Stress on Anisotropic Grain Growth in Nano-Twinned and Un-Twinned Copper Films

2020 ◽  
Author(s):  
I-Hsin Tseng ◽  
Yun-Ting Hsu ◽  
Jihperng Leu ◽  
K. N. Tu ◽  
Chih Chen
Keyword(s):  
Thermal Stress ◽  
Grain Growth ◽  
Copper Films

Effect of thermal stress on anisotropic grain growth in nano-twinned and un-twinned copper films

2021 ◽  
Vol 206 ◽  
pp. 116637
Author(s):  
I-Hsin Tseng ◽  
Yun-Ting Hsu ◽  
Jihperng Leu ◽  
K N Tu ◽  
Chih Chen
Keyword(s):  
Thermal Stress ◽  
Grain Growth ◽  
Copper Films

Kinetic study of grain growth in highly (111)-preferred nanotwinned copper films

2020 ◽  
Vol 168 ◽  
pp. 110545 ◽  
Author(s):  
Chih-Han Tseng ◽  
I-Hsin Tseng ◽  
Yu-Pei Huang ◽  
Yun-Ting Hsu ◽  
Jihperng Leu ◽  
...  
Keyword(s):  
Kinetic Study ◽  
Grain Growth ◽  
Copper Films

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

scholarly journals Increasing the mean grain size in copper films and features

2008 ◽  
Vol 23 (3) ◽  
pp. 642-662 ◽  
Author(s):  
K. Vanstreels ◽  
S.H. Brongersma ◽  
Zs. Tokei ◽  
L. Carbonell ◽  
W. De Ceuninck ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Driving Forces ◽  
Texture Evolution ◽  
Deposition Process ◽  
Interface Energy ◽  
Growth Mode ◽  
Copper Films ◽  
Mean Grain Size ◽  
The Mean

A new grain-growth mode is observed in thick sputtered copper films. This new grain-growth mode, also referred to in this work as super secondary grain growth (SSGG) leads to highly concentric grain growth with grain diameters of many tens of micrometers, and drives the system toward a {100} texture. The appearance, growth dynamics, final grain size, and self-annealing time of this new grain-growth mode strongly depends on the applied bias voltage during deposition of these sputtered films, the film thickness, the post-deposition annealing temperature, and the properties of the copper diffusion barrier layers used in this work. Moreover, a clear rivalry between this new growth mode and the regularly observed secondary grain-growth mode in sputtered copper films was found. The microstructure and texture evolution in these films is explained in terms of surface/interface energy and strain-energy density minimizing driving forces, where the latter seems to be an important driving force for the observed new growth mode. By combining these sputtered copper films with electrochemically deposited (ECD) copper films of different thickness, the SSGG growth mode could also be introduced in ECD copper, but this led to a reduced final SSGG grain size for thicker ECD films. The knowledge about the thin-film level is used to also implement this new growth mode in small copper features by slightly modifying the standard deposition process. It is shown that the SSGG growth mode can be introduced in narrow structures, but optimizations are still necessary to further increase the mean grain size in features.

Influence of a Capping Layer on the Mechanical Properties of Copper Films

1994 ◽  
Vol 356 ◽  
Author(s):  
R.-M. Keller ◽  
S. Bader ◽  
R. P. Vinci ◽  
E. Arzt
Keyword(s):  
Mechanical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Low Temperatures ◽  
Bauschinger Effect ◽  
Diffusional Creep ◽  
Copper Films ◽  
Cu Films ◽  
Heating And Cooling ◽  
Cooling Stress

AbstractThe substrate curvature technique was employed to study the mechanical properties of 0.6 μm and 1.0 μm Cu films capped with a 50 nm thick Si3N4 layer and to compare them with the mechanical properties of uncapped Cu films. The microstructures of these films were also investigated. Grain growth, diffusional creep and dislocation processes are impeded by the cap layer. This is evident in the form of high stresses at high temperatures on heating and at low temperatures on cooling. At intermediate temperatures on heating and cooling, stress plateaus a relatively low stresses exist. This can be explained by the so-called Bauschinger effect. A film thickness dependence of the stresses in the film could not be observed for capped Cu films.

The Microstructure of Copper Films Deposited by E-Beam Evaporation onto Thin Polyimide Films

1984 ◽  
Vol 40 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Appleby-Mougham
Keyword(s):  
Electron Beam ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Film Growth ◽  
Electron Beam Evaporation ◽  
Copper Films ◽  
Polyimide Films ◽  
Deposition Rates ◽  
Substrate Temperatures

AbstractCopper was deposited by electron beam evaporation onto both freshly cleaved bare and polyimide-coated (001) NaCl at substrate temperatures of 20°, 100°, 200° and 300°C at rates of 2 and 20,Åsec−1. For all substrate temperatures and deposition rates investigated, the Volmer-Weber mode of film growth was observed for copper both on polyimide and on NaCl. Comparisons of film growth on the two substrates for a constant substrate temperature revealed differences in film thickness at which copper became continuous or formed a completely coalesced film. It was found that copper grown on polyimide formed continuous and completely coalesced films at smaller film thicknesses than on NaCI. However once a completely coalesced film was obtained, grain growth in the copper films proceeded more rapidly on NaC1 substrates than on polyimide substrates.

Plasma Effects on Thin Film Microstructure

1994 ◽  
Vol 343 ◽  
Author(s):  
Munir D. Naeem ◽  
Stephen M. Rossnagel ◽  
Krishna Rajan
Keyword(s):  
Grain Growth ◽  
Thermal Effects ◽  
Low Energy ◽  
Copper Films ◽  
Rf Power ◽  
Plasma Exposure ◽  
Microstructural Changes ◽  
Cu Films ◽  
Transmission Electron ◽  
Plasma Effects

ABSTRACTWe have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (∼50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM).Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.

Anisotropy of grain boundary energies as cause of abnormal grain growth in electroplated copper films

2003 ◽  
Vol 48 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Jong-Min Paik ◽  
Young-Joon Park ◽  
Min-Seung Yoon ◽  
Je-Hun Lee ◽  
Young-Chang Joo
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Copper Films ◽  
Electroplated Copper
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