scholarly journals Dislocation Plasticity and Detwinning Under Thermal Stresses in Nanotwinned Ag Thin Films

2020 ◽  
Author(s):  
Maya K. Kini ◽  
Claudia Merola ◽  
Benjamin Breitbach ◽  
Dennis Klapproth ◽  
Bastian Philippi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stresses ◽  
Dislocation Plasticity

scholarly journals Dislocation plasticity and detwinning under thermal stresses in nanotwinned Ag thin films

2020 ◽  
Vol 198 ◽  
pp. 61-71
Author(s):  
Maya K. Kini ◽  
Claudia Merola ◽  
Benjamin Breitbach ◽  
Dennis Klapproth ◽  
Bastian Philippi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stresses ◽  
Dislocation Plasticity

Analysis of damage formation and propagation in metallic thin films under the action of thermal stresses and electric fields

1996 ◽  
Vol 2 (3) ◽  
pp. 231-258 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Matthew N. Enmark ◽  
Cora M. Leibig ◽  
Sokrates T. Pantelides
Keyword(s):  
Thin Films ◽  
Electric Fields ◽  
Thermal Stresses ◽  
Metallic Thin Films

Experimental Study of the High Cycle Fatigue of Thin Film Metal on Polyethylene Terephthalate for Flexible Electronics Applications

2009 ◽  
Author(s):  
Khalid Alzoubi ◽  
Susan Lu ◽  
Bahgat Sammakia ◽  
Mark Poliks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Flexible Electronics ◽  
Electrical Resistance ◽  
Thermal Stresses ◽  
Electronic Systems ◽  
Total Width ◽  
Flexible Substrates ◽  
Polyethylene Naphthalate

Flexible electronics represent an emerging area in the electronics packaging and systems integration industry with the potential for new product development and commercialization in the near future. Manufacturing electronics on flexible substrates will produce low cost devices that are rugged, light, and flexible. However, electronic systems are vulnerable to failures caused by mechanical and thermal stresses. For electronic systems on flexible substrates repeated stresses below the ultimate tensile strength or even below the yield strength will cause failures in the thin films. It is known that mechanical properties of thin films are different from those of bulk materials; so, it is difficult to extrapolate bulk material properties on thin film materials. The objective of this work is to study the behavior of thin-film metal coated flexible substrates under high cyclic bending fatigue loading. Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are widely used substrates in the fabrication of microelectronic devices. Factors affecting the fatigue life of thin-film coated flexible substrates were studied, including thin film thickness, temperature, and humidity. A series of experiments for sputter-deposited copper on PET substrates were performed. Electrical resistance and crack growth rate were monitored during the experiments at specified time intervals. High magnification images were obtained to observe the crack initiation and propagation in the metal film. Statistical analysis based on design of experiments concepts was performed to identify the main factors and factor’s interaction that affect the life of a thin-film coated substrate. The results of the experiments showed that the crack starts in the middle of the sample and slowly grows toward the edges. Electrical resistance increases slightly during the test until the crack length covers about 90% of the total width of the sample where a dramatic increase in the resistance takes place.

Properties of Graphite Interconnect Circuit Boards with Anisotropic Thermal Expansion

1990 ◽  
Vol 216 ◽  
Author(s):  
J. Malamas ◽  
R.P. Bambha ◽  
J.B. Ramsey ◽  
W.C. Garrett ◽  
E.G. Kelso ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Thermal Expansion ◽  
Focal Plane ◽  
Thermal Stresses ◽  
Focal Plane Arrays ◽  
Circuit Board ◽  
Circuit Boards ◽  
Anisotropic Thermal Expansion ◽  
Indium Bump

ABSTRACTWe report the investigation of an interconnect circuit board (ICB) with anisotropic thermal expansion for use with bump bonded, indirect hybrid, scanning focal plane arrays. This ICB is designed to reduce significantly the thermal stresses on the indium bump bonds during thermal cycling. Highly oriented pyrolitic graphite (HOPG) was chosen because its anisotropic thermal expansion meets the criteria for forming an indirect hybrid ICB using silicon processor circuits and mecury cadmium telluride detectors. Properties of HOPG influencing its performance as an ICB have been investigated including thermal expansion, electrical conductivity, durability, and adherence of electrically insulating thin films.

scholarly journals Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

2013 ◽  
Vol 114 (20) ◽  
pp. 204101 ◽  
Author(s):  
M. T. Kesim ◽  
J. Zhang ◽  
S. Trolier-McKinstry ◽  
J. V. Mantese ◽  
R. W. Whatmore ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Stresses ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Pyroelectric Response

THERMAL STRESS BEHAVIOR IN NANO-SIZE THIN ALUMINUM FILMS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4691-4696 ◽  
Author(s):  
TAKAO HANABUSA ◽  
KAZUYA KUSAKA ◽  
SHOSO SHINGUBARA ◽  
OSAMI SAKATA
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Synchrotron Radiation ◽  
Thermal Stresses ◽  
In Situ Observation ◽  
Aluminum Films ◽  
Stress Behavior ◽  
Thin Aluminum ◽  
20 Nm ◽  
Nano Size

In-situ observation of thermal stresses in thin films deposited on a silicon substrate was made by synchrotron radiation. Specimens prepared in this experiment were nano-size thin aluminum films with SiO 2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Synchrotron radiation revealed the diffraction intensities for these thin films and make possible to measure stresses in nano-size thin films. Residual stresses in the as-deposited state were tensile. Compressive stresses were developed in a heating cycle up to 300°C and tensile stresses were developed in a cooling cycle. The thermal stresses in the 50 nm film showed linear behavior in the first heating stage from room temperature to 250°C followed by no change in the stress at 300°C, however, linearly behaved in the second cycle. On the other hand, the thermal stresses in 20 nm and 10 nm films almost linearly behaved without any hysteresis in increasing and decreasing temperature cycles. The mechanism of thermal stress behavior in thin films can be explained by strengthening of the nano-size thin films due to inhibition of dislocation source and dislocation motion.

Appling of New Optical Measurement and Theory in Mechanical Properties of Thin Film

2011 ◽  
Vol 121-126 ◽  
pp. 4295-4299
Author(s):  
Hao MA Yun ◽  
Lu Ping Chao ◽  
J. S Hsu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Thermal Stresses ◽  
Optical Measurement ◽  
Phase Shifting ◽  
Deposition Condition ◽  
Full Field ◽  
Evaporation Technique ◽  
Film Substrate

The thesis aims to characterize the mechanical properties and stresses for thin films deposited on the circular substrates. First, the thin films with the same deposition condition were successively deposited on the distinct substrates using the evaporation technique. The phase-shifting Twyman-Green interferometer (PSTGI) was then employed to measure the warpage of the film-substrate structures and therefore the intrinsic stresses and thermal stresses can be calculated from the well-known Stoney’s formula. The coefficients of thermal expansion (CTE) and Young’s modulus of thin films were also obtained from the Stoney’s theory. Furthermore, the merit of full-field character of optical interferometry was used to propose a novel methodology using the Chen and Ou’s theory to improve the accuracy and to reduce the experiment procedures in the traditional measurement of the aforementioned mechanical properties. Finally, the measured results corresponding to the traditional and proposed methods were respectively substituted into their adopted theories to compare their difference. The results reveal that the accuracy of proposed methodology is considerably improved and the experimental procedures are reduced to those of the traditional methods.

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