Interface Control of Tetragonal Ferroelectric Phase in Ultrathin Si-Doped HfO 2 Epitaxial Films

2020 ◽  
Author(s):  
Tao Li ◽  
Juncai Dong ◽  
Nian Zhang ◽  
Zicheng Wen ◽  
Zhenzhong Sun ◽  
...  
Keyword(s):  
Ferroelectric Phase ◽  
Epitaxial Films ◽  
Interface Control ◽  
Si Doped

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

2021 ◽  
Vol 207 ◽  
pp. 116696
Author(s):  
Tao Li ◽  
Juncai Dong ◽  
Nian Zhang ◽  
Zicheng Wen ◽  
Zhenzhong Sun ◽  
...  
Keyword(s):  
Ferroelectric Phase ◽  
Epitaxial Films ◽  
Interface Control ◽  
Si Doped

Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

2015 ◽  
Vol 421 ◽  
pp. 23-26 ◽  
Author(s):  
Takayoshi Oshima ◽  
Keitaro Matsuyama ◽  
Kohei Yoshimatsu ◽  
Akira Ohtomo
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Si Doped

Monoclinic (K,Na)NbO3 Ferroelectric Phase in Epitaxial Films

2017 ◽  
Vol 3 (10) ◽  
pp. 1700226 ◽  
Author(s):  
Jin Luo ◽  
Wei Sun ◽  
Zhen Zhou ◽  
Hyun-Young Lee ◽  
Ke Wang ◽  
...  
Keyword(s):  
Ferroelectric Phase ◽  
Epitaxial Films

scholarly journals Piezoelectrics: Monoclinic (K,Na)NbO3 Ferroelectric Phase in Epitaxial Films (Adv. Electron. Mater. 10/2017)

2017 ◽  
Vol 3 (10) ◽  
Author(s):  
Jin Luo ◽  
Wei Sun ◽  
Zhen Zhou ◽  
Hyun-Young Lee ◽  
Ke Wang ◽  
...  
Keyword(s):  
Ferroelectric Phase ◽  
Epitaxial Films

Cross-sectional cathodoluminescence of GaN epitaxial films

1997 ◽  
Vol 482 ◽  
Author(s):  
M. Herrera Zaldivar ◽  
P. Fernández ◽  
J. Piqueras
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Section ◽  
Central Region ◽  
Epitaxial Films ◽  
Cross Sectional ◽  
Growth Axis ◽  
Low Emission ◽  
Si Doped ◽  
Scanning Electron

AbstractCathodoluminescence (CL) in the scanning electron microscope has been used to investigate the variation along the growth axis direction of luminescence emission from epitaxial GaN films. CL spectra recorded at different positions of the sample cross-section as well as monochromatic CL images show strong spatial variations of the different luminescence emissions along the growth axis. At the buffer layer-substrate interface and at the top part of the sample, which corresponds to a Si doped epilayer, enhanced CL emission is observed as compared with the relatively low emission in the central region of the cross-section. The nature of the defects responsible for the observed CL distribution is discussed.

A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process

2020 ◽  
Vol 117 (25) ◽  
pp. 252904
Author(s):  
Jixuan Wu ◽  
Fei Mo ◽  
Takuya Saraya ◽  
Toshiro Hiramoto ◽  
Masaharu Kobayashi
Keyword(s):  
Phase Transition ◽  
Phase Formation ◽  
First Principles ◽  
Thermal Process ◽  
Ferroelectric Phase ◽  
First Principles Study ◽  
Si Doped

Structural characteristics of ferroelectric phase transformations in single-domain epitaxial films

2004 ◽  
Vol 95 (12) ◽  
pp. 8118-8123 ◽  
Author(s):  
S. P. Alpay ◽  
I. B. Misirlioglu ◽  
A. Sharma ◽  
Z.-G. Ban
Keyword(s):  
Phase Transformations ◽  
Ferroelectric Phase ◽  
Structural Characteristics ◽  
Epitaxial Films ◽  
Single Domain

MOCVD growth and characterization of Si-doped thick-AlInN epitaxial films

2019 ◽  
Author(s):  
Mizuki Yamanaka ◽  
Makoto Miyoshi ◽  
Takashi Egawa ◽  
Tetsuya Takeuchi
Keyword(s):  
Epitaxial Films ◽  
Mocvd Growth ◽  
Si Doped
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