Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

2014 ◽  
Author(s):  
Leon Shterengas ◽  
Gregory Belenky ◽  
David Westerfeld
Keyword(s):  
High Power ◽  
Spectral Region ◽  
Diode Lasers ◽  
Type I ◽  
Novel Design

Type-I QW cascade diode lasers for spectral region above 3 μm

2016 ◽  
Author(s):  
L. Shterengas ◽  
T. Hosoda ◽  
M. Wang ◽  
T. Feng ◽  
G. Kipshidze ◽  
...  
Keyword(s):  
Spectral Region ◽  
Diode Lasers ◽  
Type I

Measurements of α-factor in 2–2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers

2002 ◽  
Vol 81 (24) ◽  
pp. 4517-4519 ◽  
Author(s):  
L. Shterengas ◽  
G. L. Belenky ◽  
A. Gourevitch ◽  
J. G. Kim ◽  
R. U. Martinelli
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Type I ◽  
Power Diode

Type-I Diode Lasers for Spectral Region Above 3 μm

2011 ◽  
Vol 17 (5) ◽  
pp. 1426-1434 ◽  
Author(s):  
Gregory Belenky ◽  
Leon Shterengas ◽  
Gela Kipshidze ◽  
Takashi Hosoda
Keyword(s):  
Spectral Region ◽  
Diode Lasers ◽  
Type I

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Current Mode ◽  
Pulsed Current ◽  
Device Performance ◽  
Type I ◽  
Mid Infrared ◽  
Double Heterojunction

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

High-power 1.9-3.3-μm type-I quantum-well cascade diode lasers

2017 ◽  
Author(s):  
L. Shterengas ◽  
T. Hosoda ◽  
M. Wang ◽  
T. Feng ◽  
G. Kipshidze ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Type I

Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 μm spectral region

2010 ◽  
Author(s):  
J. Chen ◽  
T. Hosoda ◽  
G. Tsvid ◽  
R. Liang ◽  
D. Westerfeld ◽  
...  
Keyword(s):  
Spectral Region ◽  
Room Temperature ◽  
Diode Lasers ◽  
Type I
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