Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers

2007 ◽  
Author(s):  
L. Shterengas ◽  
D. Donetsky ◽  
M. Kisin ◽  
G. Belenky
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Type I ◽  
Carrier Capture ◽  
Power Diode

Measurements of α-factor in 2–2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers

2002 ◽  
Vol 81 (24) ◽  
pp. 4517-4519 ◽  
Author(s):  
L. Shterengas ◽  
G. L. Belenky ◽  
A. Gourevitch ◽  
J. G. Kim ◽  
R. U. Martinelli
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Type I ◽  
Power Diode

High-power 1.9-3.3-μm type-I quantum-well cascade diode lasers

2017 ◽  
Author(s):  
L. Shterengas ◽  
T. Hosoda ◽  
M. Wang ◽  
T. Feng ◽  
G. Kipshidze ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Type I

Benefits of quantum well intermixing in high power diode lasers

2004 ◽  
Author(s):  
Stephen P. Najda ◽  
Gianluca Bacchin ◽  
Bocang Qiu ◽  
Xuefeng Liu ◽  
Olek P. Kowalski ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Quantum Well Intermixing ◽  
Power Diode

High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

2009 ◽  
Vol 43 (12) ◽  
pp. 1602-1605 ◽  
Author(s):  
A. V. Lyutetskiy ◽  
N. A. Pikhtin ◽  
N. V. Fetisova ◽  
A. Yu. Leshko ◽  
S. O. Slipchenko ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Asymmetric Quantum ◽  
Power Diode

High power diode lasers emitting from 639 nm to 690 nm

2014 ◽  
Author(s):  
L. Bao ◽  
M. Grimshaw ◽  
M. DeVito ◽  
M. Kanskar ◽  
W. Dong ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Power Diode
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