High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%

2007 ◽  
Vol 90 (1) ◽  
pp. 011119 ◽  
Author(s):  
L. Shterengas ◽  
G. Belenky ◽  
M. V. Kisin ◽  
D. Donetsky
1987 ◽  
Vol 51 (17) ◽  
pp. 1318-1319 ◽  
Author(s):  
R. G. Waters ◽  
D. K. Wagner ◽  
D. S. Hill ◽  
P. L. Tihanyi ◽  
B. J. Vollmer

2016 ◽  
Vol 45 (5) ◽  
pp. 0505003
Author(s):  
宋玉志 Song Yuzhi ◽  
宋甲坤 Song Jiakun ◽  
张祖银 Zhang Zuyin ◽  
李康文 Li Kangwen ◽  
徐 云 Xu Yun ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (20) ◽  
pp. 6883
Author(s):  
António Godinho ◽  
Zhaochu Yang ◽  
Tao Dong ◽  
Luís Gonçalves ◽  
Paulo Mendes ◽  
...  

Power conversion efficiency (PCE) has been one of the key concerns for power management circuits (PMC) due to the low output power of the vibrational energy harvesters. This work reports a dynamic threshold cancellation technique for a high-power conversion efficiency CMOS rectifier. The proposed rectifier consists of two stages, one passive stage with a negative voltage converter, and another stage with an active diode controlled by a threshold cancellation circuit. The former stage conducts the signal full-wave rectification with a voltage drop of 1 mV, whereas the latter reduces the reverse leakage current, consequently enhancing the output power delivered to the ohmic load. As a result, the rectifier can achieve a voltage and power conversion efficiency of over 99% and 90%, respectively, for an input voltage of 0.45 V and for low ohmic loads. The proposed circuit is designed in a standard 130 nm CMOS process and works for an operating frequency range from 800 Hz to 51.2 kHz, which is promising for practical applications.


Sign in / Sign up

Export Citation Format

Share Document