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Dilute-Nitride Type-II Quantum Well Lasers Grown by MOCVD
Mapping Intimacies
◽
10.21236/ada470869
◽
2007
◽
Author(s):
Luke J. Mawst
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Dilute Nitride
◽
Type Ii
Download Full-text
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Cited By
References
InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers
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10.1063/1.1794898
◽
2004
◽
Vol 96
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◽
pp. 4653-4655
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Cited By ~ 31
Author(s):
I. Vurgaftman
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Quantum Well
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Quantum Well Lasers
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Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared
10.1117/12.597115
◽
2005
◽
Cited By ~ 1
Author(s):
Jerry R. Meyer
◽
Igor Vurgaftman
◽
Anish A. Khandekar
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B. E. Hawkins
◽
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◽
...
Keyword(s):
Quantum Well
◽
Near Infrared
◽
Quantum Well Lasers
◽
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◽
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(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm
Applied Physics Letters
◽
10.1063/1.1616193
◽
2003
◽
Vol 83
(14)
◽
pp. 2742-2744
◽
Cited By ~ 51
Author(s):
I. Vurgaftman
◽
J. R. Meyer
◽
N. Tansu
◽
L. J. Mawst
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Type Ii
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Modulation-Doping Effect on the Linewidth Enhancement Factor of Type-II GaAsSb/GaAs Quantum-Well Lasers
Journal of the Korean Physical Society
◽
10.3938/jkps.53.3479
◽
2008
◽
Vol 53
(6)
◽
pp. 3479-3482
Author(s):
Jong-Jae Kim
◽
Hwa-Min Kim
◽
Seoung-Hwan Park
Keyword(s):
Quantum Well
◽
Enhancement Factor
◽
Quantum Well Lasers
◽
Doping Effect
◽
Type Ii
◽
Modulation Doping
◽
Linewidth Enhancement Factor
◽
Linewidth Enhancement
Download Full-text
GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.
◽
10.1109/leos.2003.1251588
◽
2004
◽
Author(s):
N. Tansu
◽
L.J. Mawst
◽
I. Vurgaftman
◽
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Keyword(s):
Quantum Well
◽
Gaas Substrate
◽
Quantum Well Lasers
◽
Type Ii
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Modelling dilute nitride 1.3 μm quantum well lasers: Incorporation of N compositional fluctuations
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC
◽
10.1109/cleoe-iqec.2013.6800742
◽
2013
◽
Author(s):
X. Sun
◽
N. Vogiatzis
◽
J. M. Rorison
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Dilute Nitride
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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
Electronics Letters
◽
10.1049/el.2011.1927
◽
2011
◽
Vol 47
(16)
◽
pp. 931
◽
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Author(s):
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◽
S.J. Sweeney
◽
S. Rogowsky
◽
R. Ostendorf
◽
J. Wagner
◽
...
Keyword(s):
Quantum Well
◽
Threshold Current
◽
Quantum Well Lasers
◽
Dilute Nitride
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Type II mid‐infrared quantum well lasers
Applied Physics Letters
◽
10.1063/1.116374
◽
1996
◽
Vol 68
(21)
◽
pp. 2976-2978
◽
Cited By ~ 66
Author(s):
J. I. Malin
◽
J. R. Meyer
◽
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◽
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◽
L. Goldberg
◽
...
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Type Ii
◽
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Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
Scientific Reports
◽
10.1038/s41598-018-25808-8
◽
2018
◽
Vol 8
(1)
◽
Author(s):
C. Fuchs
◽
A. Brüggemann
◽
M. J. Weseloh
◽
C. Berger
◽
C. Möller
◽
...
Keyword(s):
High Temperature
◽
Quantum Well
◽
Quantum Well Lasers
◽
Type Ii
◽
Injection Type
◽
Electrical Injection
◽
High Temperature Operation
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Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition
Dilute III-V Nitride Semiconductors and Material Systems - Materials Science
◽
10.1007/978-3-540-74529-7_18
◽
2008
◽
pp. 449-501
◽
Cited By ~ 1
Author(s):
N. Tansu
◽
L. J. Mawst
Keyword(s):
Chemical Vapor Deposition
◽
Quantum Well
◽
Vapor Deposition
◽
Metalorganic Chemical Vapor Deposition
◽
Chemical Vapor
◽
Quantum Well Lasers
◽
Dilute Nitride
◽
Metalorganic Chemical
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