(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm

2003 ◽  
Vol 83 (14) ◽  
pp. 2742-2744 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
N. Tansu ◽  
L. J. Mawst
1996 ◽  
Vol 68 (21) ◽  
pp. 2976-2978 ◽  
Author(s):  
J. I. Malin ◽  
J. R. Meyer ◽  
C. L. Felix ◽  
J. R. Lindle ◽  
L. Goldberg ◽  
...  

1997 ◽  
Vol 26 (5) ◽  
pp. 440-443 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
P. C. Chang ◽  
S. J. Murry ◽  
D. Zhang ◽  
Rui Q. Yang ◽  
...  

1996 ◽  
Vol 450 ◽  
Author(s):  
J. R. Meyer ◽  
C. L. Felix ◽  
J. I. Malin ◽  
I. Vurgaftman ◽  
C.-H. Lin ◽  
...  

ABSTRACTWe review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices. Examples include electro-optical and all-optical modulators based on Г-L intervalley transfer, type-II quantum well lasers with enhanced gain per injected carrier, and type-II interband cascade lasers predicted to combine low thresholds and high output powers.


1997 ◽  
Vol 71 (22) ◽  
pp. 3281-3283 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. S. Pei ◽  
H. Q. Le ◽  
J. R. Meyer ◽  
C. L. Felix

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