Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

2003 ◽  
Vol 83 (4) ◽  
pp. 644-646 ◽  
Author(s):  
B. A. Haskell ◽  
F. Wu ◽  
M. D. Craven ◽  
S. Matsuda ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth

Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

2005 ◽  
Vol 86 (11) ◽  
pp. 111917 ◽  
Author(s):  
B. A. Haskell ◽  
T. J. Baker ◽  
M. B. McLaurin ◽  
F. Wu ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth

Hydride vapor phase epitaxy for gallium nitride substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101801 ◽  
Author(s):  
Jun Hu ◽  
Hongyuan Wei ◽  
Shaoyan Yang ◽  
Chengming Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Growth of gallium nitride by hydride vapor-phase epitaxy

1997 ◽  
Vol 178 (1-2) ◽  
pp. 147-156 ◽  
Author(s):  
R.J. Molnar ◽  
W. Götz ◽  
L.T. Romano ◽  
N.M. Johnson
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 122116 ◽  
Author(s):  
Derrick S. Kamber ◽  
Yuan Wu ◽  
Edward Letts ◽  
Steven P. DenBaars ◽  
James S. Speck ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Epitaxial Overgrowth

Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

1998 ◽  
Vol 73 (24) ◽  
pp. 3583-3585 ◽  
Author(s):  
E. M. Goldys ◽  
T. Paskova ◽  
I. G. Ivanov ◽  
B. Arnaudov ◽  
B. Monemar
Keyword(s):  
Gallium Nitride ◽  
Direct Observation ◽  
Vapor Phase ◽  
Large Scale ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Atomic Arrangements and Orientations of Aligned Gallium-Nitride Nanoneedles Grown by Using Hydride Vapor Phase Epitaxy

2017 ◽  
Vol 67 (1) ◽  
pp. 30-35
Author(s):  
Ha Young LEE ◽  
Injun JEON ◽  
Ji-yeon NOH ◽  
Kyung-won LIM ◽  
Hyung Soo AHN ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

2009 ◽  
Vol 94 (12) ◽  
pp. 121906 ◽  
Author(s):  
Scott A. Newman ◽  
Derrick S. Kamber ◽  
Troy J. Baker ◽  
Yuan Wu ◽  
Feng Wu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Epitaxial Overgrowth

Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy

2015 ◽  
Vol 50 (6) ◽  
pp. 425-431 ◽  
Author(s):  
Valentin Garbe ◽  
Barbara Abendroth ◽  
Hartmut Stöcker ◽  
Arkadi Gavrilov ◽  
Doron Cohen-Elias ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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