All Electrical Spin Detection in III-V Semiconductors

2007 ◽  
Author(s):  
Ian R. Appelbaum
Keyword(s):  
Electrical Spin ◽  
Spin Detection

scholarly journals NONLOCAL ELECTRONIC SPIN DETECTION, SPIN ACCUMULATION AND THE SPIN HALL EFFECT

2009 ◽  
Vol 23 (11) ◽  
pp. 2413-2438 ◽  
Author(s):  
SERGIO O. VALENZUELA
Keyword(s):  
Hall Effect ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Hall Effect ◽  
Current Status ◽  
Pure Spin ◽  
Spin Accumulation ◽  
Spin Currents ◽  
Electrical Spin ◽  
Spin Detection

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.

Robust electrical spin injection into a semiconductor heterostructure

2000 ◽  
Vol 62 (12) ◽  
pp. 8180-8183 ◽  
Author(s):  
B. T. Jonker ◽  
Y. D. Park ◽  
B. R. Bennett ◽  
H. D. Cheong ◽  
G. Kioseoglou ◽  
...  
Keyword(s):  
Spin Injection ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

2002 ◽  
Vol 81 (2) ◽  
pp. 265-267 ◽  
Author(s):  
V. F. Motsnyi ◽  
J. De Boeck ◽  
J. Das ◽  
W. Van Roy ◽  
G. Borghs ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

2002 ◽  
Vol 80 (7) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
G. Itskos ◽  
G. Kioseoglou ◽  
A. Petrou
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Magnetic Metal ◽  
Electrical Spin

Influence of thermal annealing on the spin injection and spin detection through Fe/GaAs interfaces

2016 ◽  
Vol 108 (21) ◽  
pp. 212404 ◽  
Author(s):  
Lennart-Knud Liefeith ◽  
Rajkiran Tholapi ◽  
Max Hänze ◽  
Robert Hartmann ◽  
Taras Slobodskyy ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Spin Injection ◽  
Spin Detection

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

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