Influence of thermal annealing on the spin injection and spin detection through Fe/GaAs interfaces

2016 ◽  
Vol 108 (21) ◽  
pp. 212404 ◽  
Author(s):  
Lennart-Knud Liefeith ◽  
Rajkiran Tholapi ◽  
Max Hänze ◽  
Robert Hartmann ◽  
Taras Slobodskyy ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Spin Injection ◽  
Spin Detection

Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing

2005 ◽  
Vol 86 (5) ◽  
pp. 052901 ◽  
Author(s):  
R. Wang ◽  
X. Jiang ◽  
R. M. Shelby ◽  
R. M. Macfarlane ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Spin Injection ◽  
Injection Efficiency

scholarly journals NONLOCAL ELECTRONIC SPIN DETECTION, SPIN ACCUMULATION AND THE SPIN HALL EFFECT

2009 ◽  
Vol 23 (11) ◽  
pp. 2413-2438 ◽  
Author(s):  
SERGIO O. VALENZUELA
Keyword(s):  
Hall Effect ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Hall Effect ◽  
Current Status ◽  
Pure Spin ◽  
Spin Accumulation ◽  
Spin Currents ◽  
Electrical Spin ◽  
Spin Detection

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.

scholarly journals Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

2015 ◽  
Vol 210 ◽  
pp. 42-55 ◽  
Author(s):  
F. Volmer ◽  
M. Drögeler ◽  
G. Güntherodt ◽  
C. Stampfer ◽  
B. Beschoten
Keyword(s):  
Charge Transport ◽  
Spin Transport ◽  
Spin Injection ◽  
Spin Detection

scholarly journals Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045021 ◽  
Author(s):  
Bin Zhang ◽  
Cheng Chen ◽  
Junbo Han ◽  
Chuan Jin ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Carrier Localization ◽  
Spin Detection

Spin injection through different g-factor heterointerfaces using negative trions for spin detection

2003 ◽  
Vol 82 (4) ◽  
pp. 541-543 ◽  
Author(s):  
M. Ghali ◽  
J. Kossut ◽  
W. Heiss
Keyword(s):  
Spin Injection ◽  
G Factor ◽  
Spin Detection

Optimization of spin injection and spin detection in lateral nanostructures by geometrical means

2016 ◽  
Vol 414 ◽  
pp. 132-143 ◽  
Author(s):  
Ondřej Stejskal ◽  
Jaroslav Hamrle ◽  
Jaromír Pištora ◽  
Yoshichika Otani
Keyword(s):  
Spin Injection ◽  
Spin Detection

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films
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