scholarly journals Theory of electrical spin-detection at a ferromagnet/semiconductor interface

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
Athanasios N. Chantis ◽  
Darryl L. Smith
2009 ◽  
Vol 23 (11) ◽  
pp. 2413-2438 ◽  
Author(s):  
SERGIO O. VALENZUELA

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.


1984 ◽  
Vol 45 (C5) ◽  
pp. C5-275-C5-284
Author(s):  
A. D. Boardman ◽  
A. K. Irving

Author(s):  
K. Ando ◽  
E. Saitoh

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.


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