Crystal Growth and Thin Film Deposition of High Performance Piezoelectrics

2001 ◽  
Author(s):  
Susan Trolier-McKinstry ◽  
Thomas R. Shrout
Author(s):  
Stephen R. Forrest

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.


2020 ◽  
Vol 4 (5) ◽  
pp. 2491-2496
Author(s):  
Xi Deng ◽  
Jingchen Hua ◽  
Fuzhi Huang ◽  
Yong Peng ◽  
Wangnan Li ◽  
...  

Preparing organic–inorganic hybrid perovskite films by deploying vacuum-based methods, which are widely used for industrial thin-film deposition, is expected to promote the commercialization of perovskite solar cells.


Author(s):  
Tae Hwan Jang ◽  
Tae Gyu Kim ◽  
Mun Ki Bae ◽  
Kyuseok Kim ◽  
Jaegu Choi

In this study, we developed a nanoscale emitter having a multi-layer thin-film nanostructure in an effort to maximize the field-emission effect with a low voltage difference. The emitter was a sapphire board on which tungsten–DLC multi-player thin film was deposited using PVD and CVD processes. This multi-layer thin-film emitter was examined in a high-vacuum X-ray tube system. Its field-emission efficiency according to the applied voltage was then analyzed.


2016 ◽  
Vol 4 (17) ◽  
pp. 6395-6403 ◽  
Author(s):  
Kiho Bae ◽  
Ho-Sung Noh ◽  
Dong Young Jang ◽  
Jongsup Hong ◽  
Hyoungchul Kim ◽  
...  

We proposed a facile and reliable fabrication method by implementing a novel cell platform and thin-film-deposition based protonic ceramic fuel cells.


Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Mircea Nicolaescu ◽  
Cornelia Bandas ◽  
Corina Orha ◽  
Viorel Şerban ◽  
Carmen Lazău ◽  
...  

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.


1987 ◽  
Vol 97 ◽  
Author(s):  
T. L. Aselage

ABSTRACTBoron-rich refractory solids based on the rhombohedral structure of α-B exhibit electrical properties that range from a hopping-type semiconductor (boron carbide) to wide bandgap room temperature insulators (the boron pnictides B6P and B6As). As such, they are of interest for a variety of high temperature semiconductor applications. Preparation techniques for these unusual materials are reviewed, and new results on the crystal growth of boron carbides and B6As and on thin film deposition of B6P are presented.


1998 ◽  
Vol 508 ◽  
Author(s):  
A.T. Voutsas ◽  
A. Marmorstein ◽  
R. Solanki

AbstractIn this work we have co-optimized the deposition and excimer laser crystallization processes for formation of high quality, low-temperature, p-Si films (LPS). We have found that the post-ELA polysilicon structure is very sensitive to deposition process adjustments, collectively expressed by the deposition rate. At low rates the PECVD Si-film is deposited in the microcrystalline phase (µc-Si). Comparing µc-Si and a-Si film precursors, we have shown that at equivalent annealing conditions (laser energy density) polysilicon films obtained from µc-Si precursor demonstrate improved crystallinity (grain size, defect density). Polysilicon thin film transistors (p-Si TFTs) have been fabricated and characterized using this material and compared to our standard process. We have found that the performance of µc-Si precursor exceeds by 20-50% that of a-Si precursor. Use of µc-Si precursor may also have important implications in reducing substrate damage during ELA process and for widening the ELA process window.


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