Preparation of Boron-Rich Refractory Semiconductors

1987 ◽  
Vol 97 ◽  
Author(s):  
T. L. Aselage
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
High Temperature ◽  
Room Temperature ◽  
Thin Film Deposition ◽  
Wide Bandgap ◽  
Film Deposition ◽  
Rhombohedral Structure ◽  
Type Semiconductor ◽  
Preparation Techniques

ABSTRACTBoron-rich refractory solids based on the rhombohedral structure of α-B exhibit electrical properties that range from a hopping-type semiconductor (boron carbide) to wide bandgap room temperature insulators (the boron pnictides B6P and B6As). As such, they are of interest for a variety of high temperature semiconductor applications. Preparation techniques for these unusual materials are reviewed, and new results on the crystal growth of boron carbides and B6As and on thin film deposition of B6P are presented.

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

2012 ◽  
Vol 1447 ◽  
Author(s):  
P. Nozar ◽  
G. Mittica ◽  
S. Milita ◽  
C. Albonetti ◽  
F. Corticelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cubic Phase ◽  
Pulsed Plasma ◽  
Grid Parity ◽  
Type Semiconductor ◽  
Pulsed Plasma Deposition ◽  
Quartz Substrates

ABSTRACTCdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the literature for the crystalline cubic phase of the CdTe.The films are highly crystalline with a predominant cubic phase, a random orientation of the grains of the film and have an extremely low surface roughness of 4.6±0.7 nm r.m.s.. The low roughness, compared to traditional thermal deposition methods (close space sublimation and vapour transport) permits the reduction of the active absorber and n-type semiconductor layers resulting in a dramatic reduction of material usage and the relative deposition issues like safety, deposition rate and ultimately cost

Improving the crystal growth of a Cs0.24FA0.76PbI3−xBrx perovskite in a vapor–solid reaction process using strontium iodide

2020 ◽  
Vol 4 (5) ◽  
pp. 2491-2496
Author(s):  
Xi Deng ◽  
Jingchen Hua ◽  
Fuzhi Huang ◽  
Yong Peng ◽  
Wangnan Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Crystal Growth ◽  
Perovskite Solar Cells ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Reaction Process ◽  
Solid Reaction ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite

Preparing organic–inorganic hybrid perovskite films by deploying vacuum-based methods, which are widely used for industrial thin-film deposition, is expected to promote the commercialization of perovskite solar cells.

Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique

2021 ◽  
Vol 20 (2) ◽  
pp. 14-18
Author(s):  
Nur Afiqah Othman ◽  
Nafarizal Nayan ◽  
Mohd Kamarulzaki Mustafa ◽  
Zulkifli Azman ◽  
Megat Muhammad Ikhsan Megat Hasnan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Structural Properties ◽  
Room Temperature ◽  
Thin Film Deposition ◽  
Xrd Analysis ◽  
Amorphous Structure ◽  
Film Deposition ◽  
Rf Power

To date, the deposition of AlGaN thin film using the co-sputtering technique at room temperature has not been reported yet. The use of AlGaN for electronic devices has been widely known because of its ultra-wide bandgap. However, to deposit the AlGaN thin film and achieved high quality of AlGaN films, higher temperature or extra time deposition are needed, which is not compatible with industrial fabrication process. Here, a co-sputtering technique between two power supplies of magnetron sputtering (which are RF and HiPIMS) is introduced to deposit the AlGaN thin films. The AlGaN thin films were deposited at various RF power to study their effect on structural properties and morphology of the thin films. AlGaN films were sputtered simultaneously on silicon (111) substrate for short time and at room temperature using GaN and Al target. Then, the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), and surface profiler to study their properties. XRD shows the GaN (101) and (013) plane for the AlGaN deposited at RF power of 30 W. Also there only GaN (101) for the AlGaN with 50 W RF power. Yet, the 70 W RF power shows the amorphous structure of AlGaN. The roughness and the grain size of AlGaN film from AFM analysis showed the trend of decreasing and increasing respectively. The roughness of the AlGaN films with 30 W power was 0.82 nm, 0.85 nm for 50 W, and 0.46 nm for 70 W RF power.  The grain size of the AlGaN films was 30.06 nm, 32.10 nm, and 37.65 nm for RF power of 30 W, 50 W, and 70 W respectively. The profilometer found that the thickness of the AlGaN films was decreasing with increasing of RF power. This paper can demonstrate a successful co-sputtering technique of AlGaN. Despite AlGaN crystal structure was not able to found out in the XRD analysis, the effect of RF power has been studied to give significant effects on AlGaN thin film deposition.

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